Observation of suppressed interdiffusion in FeRh/FePt-Ta bilayer thin films

Sung Uk Jang, Eon Byeong Park, Ji Hong Kim, Ki Hoon Park, Ji Sung Lee, Young-geun Kim, Seungmin Hyun, Hak Joo Lee, Soon Ju Kwon, Hwan Soo Lee

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FeRh/FePt bilayers on MgO (100) substrates were fabricated by rf-magnetron sputtering, and the magnetic properties and microstructures of the bilayers were studied in terms of Ta addition to the storage layer. Compared to undoped FeRh/FePt bilayers, FeRh/FePt-Ta bilayer films showed improved magnetic properties and lower degree of interdiffusion. The FeRh/FePt-Ta bilayers clearly demonstrated the AFM-FM transition. Reduced interdiffusion by Ta segregation along grain boundaries was speculated to be a possible cause for the observed improvement in magnetic properties when fabricated at high temperature.

Original languageEnglish
Article number5467680
Pages (from-to)2104-2107
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number6
Publication statusPublished - 2010 Jun 1


  • FePt-Ta
  • FeRh/FePt-Ta bilayer
  • Ferromagnetic and antiferromagentic transition
  • Interdiffusion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Jang, S. U., Park, E. B., Kim, J. H., Park, K. H., Lee, J. S., Kim, Y., Hyun, S., Lee, H. J., Kwon, S. J., & Lee, H. S. (2010). Observation of suppressed interdiffusion in FeRh/FePt-Ta bilayer thin films. IEEE Transactions on Magnetics, 46(6), 2104-2107. [5467680]. https://doi.org/10.1109/TMAG.2010.2042148