Observation of suppressed interdiffusion in FeRh/FePt-Ta bilayer thin films

Sung Uk Jang, Eon Byeong Park, Ji Hong Kim, Ki Hoon Park, Ji Sung Lee, Young-geun Kim, Seungmin Hyun, Hak Joo Lee, Soon Ju Kwon, Hwan Soo Lee

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Abstract

FeRh/FePt bilayers on MgO (100) substrates were fabricated by rf-magnetron sputtering, and the magnetic properties and microstructures of the bilayers were studied in terms of Ta addition to the storage layer. Compared to undoped FeRh/FePt bilayers, FeRh/FePt-Ta bilayer films showed improved magnetic properties and lower degree of interdiffusion. The FeRh/FePt-Ta bilayers clearly demonstrated the AFM-FM transition. Reduced interdiffusion by Ta segregation along grain boundaries was speculated to be a possible cause for the observed improvement in magnetic properties when fabricated at high temperature.

Original languageEnglish
Article number5467680
Pages (from-to)2104-2107
Number of pages4
JournalIEEE Transactions on Magnetics
Volume46
Issue number6
DOIs
Publication statusPublished - 2010 Jun 1

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Keywords

  • FePt-Ta
  • FeRh/FePt-Ta bilayer
  • Ferromagnetic and antiferromagentic transition
  • Interdiffusion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Jang, S. U., Park, E. B., Kim, J. H., Park, K. H., Lee, J. S., Kim, Y., ... Lee, H. S. (2010). Observation of suppressed interdiffusion in FeRh/FePt-Ta bilayer thin films. IEEE Transactions on Magnetics, 46(6), 2104-2107. [5467680]. https://doi.org/10.1109/TMAG.2010.2042148