Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy

J. D. Song, Y. W. Ok, J. M. Kim, Y. T. Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED) have been used to investigate GaInP molecular beam epitaxial layers grown at temperatures in the range 445-510°C. TED results reveal the presence of diffracted intensity at 1/2(-1 1 1) and 1/2(1-1 1) positions, indicating the occurrence of CuPt-B ordering. As the growth temperature decreases, the superlattice spots move toward 1/2{-1 + δ, 1-δ, 0} positions, where the value of δ is 0.15. It is further shown that for the layers grown at temperatures in the range 445-490°C, weak diffracted intensity is observed at 1/2(1 1 -1) and 1/2(1 1 1) positions, indicating the formation of CuPt-A ordering. Based on the TED and RHEED results, explanations are given to describe the formation of CuPt-A and CuPt-B type ordering. Photoluminescence results show that the samples grown at temperatures in the range 470-510°C undergo a bandgap reduction. This is attributed to the presence of ordered structures and composition modulation.

Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalApplied Surface Science
Volume183
Issue number1-2
DOIs
Publication statusPublished - 2001 Nov 12
Externally publishedYes

Fingerprint

Electron reflection
Molecular beam epitaxy
Electron diffraction
Reflection high energy electron diffraction
molecular beam epitaxy
electron diffraction
occurrences
Molecular beams
high energy electrons
Epitaxial layers
Growth temperature
Temperature
Photoluminescence
Energy gap
Modulation
temperature
molecular beams
Chemical analysis
photoluminescence
modulation

Keywords

  • GaInP
  • Molecular beam epitaxy
  • Ordering
  • Photoluminescence
  • Reflection high-energy electron diffraction
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy. / Song, J. D.; Ok, Y. W.; Kim, J. M.; Lee, Y. T.; Seong, Tae Yeon.

In: Applied Surface Science, Vol. 183, No. 1-2, 12.11.2001, p. 33-38.

Research output: Contribution to journalArticle

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abstract = "Transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED) have been used to investigate GaInP molecular beam epitaxial layers grown at temperatures in the range 445-510°C. TED results reveal the presence of diffracted intensity at 1/2(-1 1 1) and 1/2(1-1 1) positions, indicating the occurrence of CuPt-B ordering. As the growth temperature decreases, the superlattice spots move toward 1/2{-1 + δ, 1-δ, 0} positions, where the value of δ is 0.15. It is further shown that for the layers grown at temperatures in the range 445-490°C, weak diffracted intensity is observed at 1/2(1 1 -1) and 1/2(1 1 1) positions, indicating the formation of CuPt-A ordering. Based on the TED and RHEED results, explanations are given to describe the formation of CuPt-A and CuPt-B type ordering. Photoluminescence results show that the samples grown at temperatures in the range 470-510°C undergo a bandgap reduction. This is attributed to the presence of ordered structures and composition modulation.",
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AU - Song, J. D.

AU - Ok, Y. W.

AU - Kim, J. M.

AU - Lee, Y. T.

AU - Seong, Tae Yeon

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AB - Transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED) have been used to investigate GaInP molecular beam epitaxial layers grown at temperatures in the range 445-510°C. TED results reveal the presence of diffracted intensity at 1/2(-1 1 1) and 1/2(1-1 1) positions, indicating the occurrence of CuPt-B ordering. As the growth temperature decreases, the superlattice spots move toward 1/2{-1 + δ, 1-δ, 0} positions, where the value of δ is 0.15. It is further shown that for the layers grown at temperatures in the range 445-490°C, weak diffracted intensity is observed at 1/2(1 1 -1) and 1/2(1 1 1) positions, indicating the formation of CuPt-A ordering. Based on the TED and RHEED results, explanations are given to describe the formation of CuPt-A and CuPt-B type ordering. Photoluminescence results show that the samples grown at temperatures in the range 470-510°C undergo a bandgap reduction. This is attributed to the presence of ordered structures and composition modulation.

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