Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy

J. D. Song, Y. W. Ok, J. M. Kim, Y. T. Lee, T. Y. Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED) have been used to investigate GaInP molecular beam epitaxial layers grown at temperatures in the range 445-510°C. TED results reveal the presence of diffracted intensity at 1/2(-1 1 1) and 1/2(1-1 1) positions, indicating the occurrence of CuPt-B ordering. As the growth temperature decreases, the superlattice spots move toward 1/2{-1 + δ, 1-δ, 0} positions, where the value of δ is 0.15. It is further shown that for the layers grown at temperatures in the range 445-490°C, weak diffracted intensity is observed at 1/2(1 1 -1) and 1/2(1 1 1) positions, indicating the formation of CuPt-A ordering. Based on the TED and RHEED results, explanations are given to describe the formation of CuPt-A and CuPt-B type ordering. Photoluminescence results show that the samples grown at temperatures in the range 470-510°C undergo a bandgap reduction. This is attributed to the presence of ordered structures and composition modulation.

Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalApplied Surface Science
Volume183
Issue number1-2
DOIs
Publication statusPublished - 2001 Nov 12
Externally publishedYes

Keywords

  • GaInP
  • Molecular beam epitaxy
  • Ordering
  • Photoluminescence
  • Reflection high-energy electron diffraction
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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