Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs

Dongsu Kim, Jooyoon Kim, Jongsun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.

Original languageEnglish
Title of host publication2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665435536
DOIs
Publication statusPublished - 2021 Jun 27
Event36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 - Jeju, Korea, Republic of
Duration: 2021 Jun 272021 Jun 30

Publication series

Name2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021

Conference

Conference36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
Country/TerritoryKorea, Republic of
CityJeju
Period21/6/2721/6/30

Keywords

  • Magnetic Tunnel Junction (MTJ)
  • Read Margin
  • Reliability
  • Sense amplifier
  • Spin-Transfer Torque (STT)

ASJC Scopus subject areas

  • Artificial Intelligence
  • Computer Networks and Communications
  • Hardware and Architecture
  • Information Systems
  • Electrical and Electronic Engineering

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