TY - GEN
T1 - Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs
AU - Kim, Dongsu
AU - Kim, Jooyoon
AU - Park, Jongsun
N1 - Funding Information:
This work was supported in part by the MSIT(Ministry of Science and ICT), Korea, under the ITRC(Information Technology Research Center) support program(IITP-2021-2018-0-01433) supervised by the IITP(Institute for Information & communications Technology Promotion), and in part by the National Research Foundation of Korea under Grant NRF-2015M3D1A1070465.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/27
Y1 - 2021/6/27
N2 - Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.
AB - Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.
KW - Magnetic Tunnel Junction (MTJ)
KW - Read Margin
KW - Reliability
KW - Sense amplifier
KW - Spin-Transfer Torque (STT)
UR - http://www.scopus.com/inward/record.url?scp=85113945821&partnerID=8YFLogxK
U2 - 10.1109/ITC-CSCC52171.2021.9501267
DO - 10.1109/ITC-CSCC52171.2021.9501267
M3 - Conference contribution
AN - SCOPUS:85113945821
T3 - 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
BT - 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
Y2 - 27 June 2021 through 30 June 2021
ER -