Abstract
The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.
Original language | English |
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Article number | 062104 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2005 Feb 7 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)