Abstract
The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.
| Original language | English |
|---|---|
| Article number | 062104 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2005 Feb 7 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Ohmic and degradation mechanisms of Ag contacts on p-type GaN. / Song, June O.; Kwak, Joon Seop; Park, Yongjo; Seong, Tae Yeon.
In: Applied Physics Letters, Vol. 86, No. 6, 062104, 07.02.2005, p. 1-3.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ohmic and degradation mechanisms of Ag contacts on p-type GaN
AU - Song, June O.
AU - Kwak, Joon Seop
AU - Park, Yongjo
AU - Seong, Tae Yeon
PY - 2005/2/7
Y1 - 2005/2/7
N2 - The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.
AB - The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.
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U2 - 10.1063/1.1863441
DO - 10.1063/1.1863441
M3 - Article
AN - SCOPUS:21044445349
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 062104
ER -