Ohmic and degradation mechanisms of Ag contacts on p-type GaN

June O. Song, Joon Seop Kwak, Yongjo Park, Tae Yeon Seong

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.

Original languageEnglish
Article number062104
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number6
DOIs
Publication statusPublished - 2005 Feb 7
Externally publishedYes

Fingerprint

light emitting diodes
degradation
reflectance
x ray analysis
annealing
output
electric contacts
synchrotrons
x ray diffraction
photoelectric emission
electrical properties
optical properties
transmission electron microscopy
electrical resistivity
air
electric potential
spectroscopy
x rays
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ohmic and degradation mechanisms of Ag contacts on p-type GaN. / Song, June O.; Kwak, Joon Seop; Park, Yongjo; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 86, No. 6, 062104, 07.02.2005, p. 1-3.

Research output: Contribution to journalArticle

Song, June O. ; Kwak, Joon Seop ; Park, Yongjo ; Seong, Tae Yeon. / Ohmic and degradation mechanisms of Ag contacts on p-type GaN. In: Applied Physics Letters. 2005 ; Vol. 86, No. 6. pp. 1-3.
@article{54b60bd4da3c40c3b6b1444bf254bf36,
title = "Ohmic and degradation mechanisms of Ag contacts on p-type GaN",
abstract = "The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84{\%} when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.",
author = "Song, {June O.} and Kwak, {Joon Seop} and Yongjo Park and Seong, {Tae Yeon}",
year = "2005",
month = "2",
day = "7",
doi = "10.1063/1.1863441",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Ohmic and degradation mechanisms of Ag contacts on p-type GaN

AU - Song, June O.

AU - Kwak, Joon Seop

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2005/2/7

Y1 - 2005/2/7

N2 - The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.

AB - The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.

UR - http://www.scopus.com/inward/record.url?scp=21044445349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21044445349&partnerID=8YFLogxK

U2 - 10.1063/1.1863441

DO - 10.1063/1.1863441

M3 - Article

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 062104

ER -