Ohmic and degradation mechanisms of Ag contacts on p-type GaN

June O. Song; Joon Seop Kwak; Yongjo Park; Tae Yeon Seong

doi:10.1063/1.1863441

Ohmic and degradation mechanisms of Ag contacts on p-type GaN

June O. Song, Joon Seop Kwak, Yongjo Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

127 Citations (Scopus)

Abstract

The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 ^-4 Ω cm² and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.

Original language	English
Article number	062104
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	6
DOIs	https://doi.org/10.1063/1.1863441
Publication status	Published - 2005 Feb 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1863441

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title = "Ohmic and degradation mechanisms of Ag contacts on p-type GaN",

abstract = "The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.",

author = "Song, {June O.} and Kwak, {Joon Seop} and Yongjo Park and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the basic research program of Korea Science and Engineering Foundation (Grant No. R01-2002-000-00356-0). The authors are grateful to M. Y. Kim for her help in TEM analyses.",

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doi = "10.1063/1.1863441",

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T1 - Ohmic and degradation mechanisms of Ag contacts on p-type GaN

AU - Song, June O.

AU - Kwak, Joon Seop

AU - Park, Yongjo

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the basic research program of Korea Science and Engineering Foundation (Grant No. R01-2002-000-00356-0). The authors are grateful to M. Y. Kim for her help in TEM analyses.

PY - 2005/2/7

Y1 - 2005/2/7

N2 - The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.

AB - The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47 × 10 -4 Ω cm2 and produces reflectance of ∼84% when annealed at 330°C for 1 mm in air ambient. However, annealing at 530°C results in nonlinear current-voltage behavior and degraded reflectance. The light output of InGaN/GaN blue light emitting diodes (LEDs) fabricated with the as-deposited Ag contact shows somewhat better output performance than those of LEDs with the annealed Ag contacts. Based on the transmission electron microscopy-energy dispersive x-ray analysis, synchrotron x-ray diffraction, and x-ray photoemission spectroscopy results, possible mechanisms for the ohmic formation and degradation of the Ag contacts are described.

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JF - Applied Physics Letters

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ER -

Ohmic and degradation mechanisms of Ag contacts on p-type GaN

Abstract

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