Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact

June O. Song, Jun Seok Ha, Tae Yeon Seong

Research output: Contribution to journalArticle

124 Citations (Scopus)

Abstract

GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, highquality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.

Original languageEnglish
Article number5342486
Pages (from-to)42-59
Number of pages18
JournalIEEE Transactions on Electron Devices
Volume57
Issue number1
DOIs
Publication statusPublished - 2010 Jan

Keywords

  • Gallium nitride
  • Light-emitting diodes (LEDs)
  • Transparent and reflective ohmic contacts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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