Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact

June O. Song; Jun Seok Ha; Tae Yeon Seong

doi:10.1109/TED.2009.2034506

Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact

June O. Song, Jun Seok Ha, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

143 Citations (Scopus)

Abstract

GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, highquality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.

Original language	English
Article number	5342486
Pages (from-to)	42-59
Number of pages	18
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/TED.2009.2034506
Publication status	Published - 2010 Jan

Keywords

Gallium nitride
Light-emitting diodes (LEDs)
Transparent and reflective ohmic contacts

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2009.2034506

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title = "Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact",

abstract = "GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, highquality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.",

keywords = "Gallium nitride, Light-emitting diodes (LEDs), Transparent and reflective ohmic contacts",

author = "Song, {June O.} and Ha, {Jun Seok} and Seong, {Tae Yeon}",

note = "Funding Information: Manuscript received June 2, 2009; revised September 15, 2009. First published December 1, 2009; current version published December 23, 2009. This work was supported in part by the Ministry of Knowledge and Economy through the Manpower Development Program for Energy and Resources under Grant 2008-E-AP-HM-P-16-0000, by the Korean government under Korea Research Foundation Grant KRF-2008-313-D00593, and by the Ministry of Education Science and Technology through World Class University Program under Grant R33-2008-000-10025-0. The review of this paper was arranged by Editor M. J. Kumar.",

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doi = "10.1109/TED.2009.2034506",

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AU - Ha, Jun Seok

AU - Seong, Tae Yeon

N1 - Funding Information: Manuscript received June 2, 2009; revised September 15, 2009. First published December 1, 2009; current version published December 23, 2009. This work was supported in part by the Ministry of Knowledge and Economy through the Manpower Development Program for Energy and Resources under Grant 2008-E-AP-HM-P-16-0000, by the Korean government under Korea Research Foundation Grant KRF-2008-313-D00593, and by the Ministry of Education Science and Technology through World Class University Program under Grant R33-2008-000-10025-0. The review of this paper was arranged by Editor M. J. Kumar.

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N2 - GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, highquality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.

AB - GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, highquality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.

KW - Gallium nitride

KW - Light-emitting diodes (LEDs)

KW - Transparent and reflective ohmic contacts

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Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact

Abstract

Keywords

ASJC Scopus subject areas

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