On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity

M. W. Ahn, K. S. Park, J. H. Heo, Dong-Wan Kim, K. J. Choi, J. G. Park

Research output: Contribution to journalArticle

241 Citations (Scopus)

Abstract

ZnO-nanowire gas sensors were fabricated by a selective growth of nanowires on patterned Au catalysts thus forming nanowire air bridges or 'nanobridges' between two Pt pillar electrodes. The gas sensing properties of nanobridge gas sensors were demonstrated using a diluted NO2. The response, as a function of temperature, was highest at 225 °C and was linearly increased with the concentration of NO2 in the range of 0.5-3 ppm and then showed a sign of saturation. Our sensor showed higher response compared with different types of sensors including ZnO nanocrystals, Sn- and In-doped ZnO thin film, or ZnO nanowires. The enhanced response was attributed to the additional modulation of the sensor resistance due to potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire. Also nanobridge structure enabled fast recovery behavior because desorbed gas molecules can be easily swept away from the surface of ZnO nanowire without re-adsorption.

Original languageEnglish
Pages (from-to)168-173
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume138
Issue number1
DOIs
Publication statusPublished - 2009 Apr 24
Externally publishedYes

Fingerprint

Chemical sensors
Nanowires
nanowires
Gases
chips
Fabrication
fabrication
sensors
gases
Sensors
Nanocrystals
nanocrystals
depletion
recovery
Modulation
saturation
modulation
Adsorption
catalysts
Recovery

Keywords

  • Gas sensor
  • NO
  • On-chip fabrication
  • ZnO nanowire

ASJC Scopus subject areas

  • Instrumentation
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity. / Ahn, M. W.; Park, K. S.; Heo, J. H.; Kim, Dong-Wan; Choi, K. J.; Park, J. G.

In: Sensors and Actuators, B: Chemical, Vol. 138, No. 1, 24.04.2009, p. 168-173.

Research output: Contribution to journalArticle

Ahn, M. W. ; Park, K. S. ; Heo, J. H. ; Kim, Dong-Wan ; Choi, K. J. ; Park, J. G. / On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity. In: Sensors and Actuators, B: Chemical. 2009 ; Vol. 138, No. 1. pp. 168-173.
@article{9a30d8f7db5d4897ba87b2dcceff4bbd,
title = "On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity",
abstract = "ZnO-nanowire gas sensors were fabricated by a selective growth of nanowires on patterned Au catalysts thus forming nanowire air bridges or 'nanobridges' between two Pt pillar electrodes. The gas sensing properties of nanobridge gas sensors were demonstrated using a diluted NO2. The response, as a function of temperature, was highest at 225 °C and was linearly increased with the concentration of NO2 in the range of 0.5-3 ppm and then showed a sign of saturation. Our sensor showed higher response compared with different types of sensors including ZnO nanocrystals, Sn- and In-doped ZnO thin film, or ZnO nanowires. The enhanced response was attributed to the additional modulation of the sensor resistance due to potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire. Also nanobridge structure enabled fast recovery behavior because desorbed gas molecules can be easily swept away from the surface of ZnO nanowire without re-adsorption.",
keywords = "Gas sensor, NO, On-chip fabrication, ZnO nanowire",
author = "Ahn, {M. W.} and Park, {K. S.} and Heo, {J. H.} and Dong-Wan Kim and Choi, {K. J.} and Park, {J. G.}",
year = "2009",
month = "4",
day = "24",
doi = "10.1016/j.snb.2009.02.008",
language = "English",
volume = "138",
pages = "168--173",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity

AU - Ahn, M. W.

AU - Park, K. S.

AU - Heo, J. H.

AU - Kim, Dong-Wan

AU - Choi, K. J.

AU - Park, J. G.

PY - 2009/4/24

Y1 - 2009/4/24

N2 - ZnO-nanowire gas sensors were fabricated by a selective growth of nanowires on patterned Au catalysts thus forming nanowire air bridges or 'nanobridges' between two Pt pillar electrodes. The gas sensing properties of nanobridge gas sensors were demonstrated using a diluted NO2. The response, as a function of temperature, was highest at 225 °C and was linearly increased with the concentration of NO2 in the range of 0.5-3 ppm and then showed a sign of saturation. Our sensor showed higher response compared with different types of sensors including ZnO nanocrystals, Sn- and In-doped ZnO thin film, or ZnO nanowires. The enhanced response was attributed to the additional modulation of the sensor resistance due to potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire. Also nanobridge structure enabled fast recovery behavior because desorbed gas molecules can be easily swept away from the surface of ZnO nanowire without re-adsorption.

AB - ZnO-nanowire gas sensors were fabricated by a selective growth of nanowires on patterned Au catalysts thus forming nanowire air bridges or 'nanobridges' between two Pt pillar electrodes. The gas sensing properties of nanobridge gas sensors were demonstrated using a diluted NO2. The response, as a function of temperature, was highest at 225 °C and was linearly increased with the concentration of NO2 in the range of 0.5-3 ppm and then showed a sign of saturation. Our sensor showed higher response compared with different types of sensors including ZnO nanocrystals, Sn- and In-doped ZnO thin film, or ZnO nanowires. The enhanced response was attributed to the additional modulation of the sensor resistance due to potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire. Also nanobridge structure enabled fast recovery behavior because desorbed gas molecules can be easily swept away from the surface of ZnO nanowire without re-adsorption.

KW - Gas sensor

KW - NO

KW - On-chip fabrication

KW - ZnO nanowire

UR - http://www.scopus.com/inward/record.url?scp=63749125435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63749125435&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2009.02.008

DO - 10.1016/j.snb.2009.02.008

M3 - Article

VL - 138

SP - 168

EP - 173

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1

ER -