On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection

Seong Bin Kim, Jongmin Geum, Sinsu Kyoung, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900V power MOSFET gate ESD protection is optimized.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479932962
DOIs
Publication statusPublished - 2014 Jan 23
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 2014 Oct 282014 Oct 31

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period14/10/2814/10/31

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

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