On the origin of spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova, M. Izadifard, W. M. Chen, Ji Hyun Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The analysis of spin polarization of GaMn/InGaN light-emitting diodes by molecular beam epitaxy was discussed. The diode were shown to exhibit very low efficiency of spin injection, in spite of the behavior of the GaMnN spin injector. The spin loss in the structure was shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroy any spin polarization by optical spin orientation of electrical spin injection. The magnetic measurements in a quantum design superconducting quantum interference device were also performed.

Original languageEnglish
Pages (from-to)2599-2601
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
Publication statusPublished - 2004 Apr 5
Externally publishedYes

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light emitting diodes
injection
polarization
injectors
magnetic measurement
molecular beam epitaxy
diodes
interference
detectors

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Buyanova, I. A., Izadifard, M., Chen, W. M., Kim, J. H., Ren, F., Thaler, G., ... Zavada, J. M. (2004). On the origin of spin loss in GaMnN/InGaN light-emitting diodes. Applied Physics Letters, 84(14), 2599-2601. https://doi.org/10.1063/1.1695100

On the origin of spin loss in GaMnN/InGaN light-emitting diodes. / Buyanova, I. A.; Izadifard, M.; Chen, W. M.; Kim, Ji Hyun; Ren, F.; Thaler, G.; Abernathy, C. R.; Pearton, S. J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.; Zavada, J. M.

In: Applied Physics Letters, Vol. 84, No. 14, 05.04.2004, p. 2599-2601.

Research output: Contribution to journalArticle

Buyanova, IA, Izadifard, M, Chen, WM, Kim, JH, Ren, F, Thaler, G, Abernathy, CR, Pearton, SJ, Pan, CC, Chen, GT, Chyi, JI & Zavada, JM 2004, 'On the origin of spin loss in GaMnN/InGaN light-emitting diodes', Applied Physics Letters, vol. 84, no. 14, pp. 2599-2601. https://doi.org/10.1063/1.1695100
Buyanova IA, Izadifard M, Chen WM, Kim JH, Ren F, Thaler G et al. On the origin of spin loss in GaMnN/InGaN light-emitting diodes. Applied Physics Letters. 2004 Apr 5;84(14):2599-2601. https://doi.org/10.1063/1.1695100
Buyanova, I. A. ; Izadifard, M. ; Chen, W. M. ; Kim, Ji Hyun ; Ren, F. ; Thaler, G. ; Abernathy, C. R. ; Pearton, S. J. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. ; Zavada, J. M. / On the origin of spin loss in GaMnN/InGaN light-emitting diodes. In: Applied Physics Letters. 2004 ; Vol. 84, No. 14. pp. 2599-2601.
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