On the origin of spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova, M. Izadifard, W. M. Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The analysis of spin polarization of GaMn/InGaN light-emitting diodes by molecular beam epitaxy was discussed. The diode were shown to exhibit very low efficiency of spin injection, in spite of the behavior of the GaMnN spin injector. The spin loss in the structure was shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroy any spin polarization by optical spin orientation of electrical spin injection. The magnetic measurements in a quantum design superconducting quantum interference device were also performed.

Original languageEnglish
Pages (from-to)2599-2601
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
Publication statusPublished - 2004 Apr 5

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'On the origin of spin loss in GaMnN/InGaN light-emitting diodes'. Together they form a unique fingerprint.

  • Cite this

    Buyanova, I. A., Izadifard, M., Chen, W. M., Kim, J., Ren, F., Thaler, G., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., Chyi, J. I., & Zavada, J. M. (2004). On the origin of spin loss in GaMnN/InGaN light-emitting diodes. Applied Physics Letters, 84(14), 2599-2601. https://doi.org/10.1063/1.1695100