On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds

Jiahui Yuan, John D. Cressler, Ramkumar Krithivasan, Tushar Thrivikraman, Marwan H. Khater, David C. Ahlgren, Alvin J. Joseph, Jae-Sung Rieh

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The goal of achieving terahertz (THz) transistors within the silicon material system has generated significant recent interest. In this paper, we use operating temperature as an effective way of gaining a better understanding of the performance limits of SiGe HBTs and their ultimate capabilities for achieving THz speeds. Different approaches for vertical profile scaling and reduction of parasitics are addressed, and three prototype fourth-generation SiGe HBTs are compared and evaluated down to deep cryogenic temperatures, using both dc and ac measurements. A record peak f T/f max of 463/618 GHz was achieved at 4.5 K using 130-nm lithography (309/343 GHz at 300 K), demonstrating the feasibility of reaching half-THz f T and f max simultaneously in a silicon-based transistor. The BV CEO of this cooled SiGe HBT was 1.6 V at 4.5 K (BV CBO = 5.6 V), yielding a record f T × BV CEO product of 750 GHz · V (510 GHz · at 300 K). These remarkable levels of transistor performance and the associated interesting device physics observed at cryogenic temperatures in these devices provide important insights into further device scaling for THz speeds at room temperature. It is predicted in a new scaling roadmap that f T/f max} of room-temperature SiGe HBTs could potentially achieve 782/910 GHz at a BV CEO of 1.1 V at the 32-nm lithographic node.

Original languageEnglish
Pages (from-to)1007-1019
Number of pages13
JournalIEEE Transactions on Electron Devices
Volume56
Issue number5
DOIs
Publication statusPublished - 2009 Mar 24

Fingerprint

Heterojunction bipolar transistors
Transistors
Silicon
Cryogenics
Temperature
Lithography
Physics

Keywords

  • Cryogenic temperatures
  • Device scaling
  • Heterojunction bipolar transistor (HBT)
  • Noise figure
  • Silicon-germanium (SiGe)
  • Terahertz (THz)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds. / Yuan, Jiahui; Cressler, John D.; Krithivasan, Ramkumar; Thrivikraman, Tushar; Khater, Marwan H.; Ahlgren, David C.; Joseph, Alvin J.; Rieh, Jae-Sung.

In: IEEE Transactions on Electron Devices, Vol. 56, No. 5, 24.03.2009, p. 1007-1019.

Research output: Contribution to journalArticle

Yuan, J, Cressler, JD, Krithivasan, R, Thrivikraman, T, Khater, MH, Ahlgren, DC, Joseph, AJ & Rieh, J-S 2009, 'On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds', IEEE Transactions on Electron Devices, vol. 56, no. 5, pp. 1007-1019. https://doi.org/10.1109/TED.2009.2016017
Yuan, Jiahui ; Cressler, John D. ; Krithivasan, Ramkumar ; Thrivikraman, Tushar ; Khater, Marwan H. ; Ahlgren, David C. ; Joseph, Alvin J. ; Rieh, Jae-Sung. / On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds. In: IEEE Transactions on Electron Devices. 2009 ; Vol. 56, No. 5. pp. 1007-1019.
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