The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low noise corner frequencies of 220 Hz in SiGe HBTs with a peak fT of 210 GHz. An explanation for this behavior based on a reduction of the number of dominant noisy traps is offered, and microscopic 2-D simulations of noise are used to support this claim and explore the origins and scaling limits of low-frequency noise in advanced SiGe HBTs.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry