On the scaling limits of low-frequency noise in SiGe HBTs

J. Johansen, Z. Jin, J. D. Cressler, Y. Cui, G. Niu, Q. Liang, Jae-Sung Rieh, G. Freeman, D. Ahlgren, A. Joseph

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages12-13
Number of pages2
ISBN (Print)0780381394, 9780780381391
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 2003 Dec 102003 Dec 12

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period03/12/1003/12/12

Fingerprint

Heterojunction bipolar transistors
Phase noise
Communication systems
Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Johansen, J., Jin, Z., Cressler, J. D., Cui, Y., Niu, G., Liang, Q., ... Joseph, A. (2003). On the scaling limits of low-frequency noise in SiGe HBTs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 12-13). [1271972] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1271972

On the scaling limits of low-frequency noise in SiGe HBTs. / Johansen, J.; Jin, Z.; Cressler, J. D.; Cui, Y.; Niu, G.; Liang, Q.; Rieh, Jae-Sung; Freeman, G.; Ahlgren, D.; Joseph, A.

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 12-13 1271972.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Johansen, J, Jin, Z, Cressler, JD, Cui, Y, Niu, G, Liang, Q, Rieh, J-S, Freeman, G, Ahlgren, D & Joseph, A 2003, On the scaling limits of low-frequency noise in SiGe HBTs. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1271972, Institute of Electrical and Electronics Engineers Inc., pp. 12-13, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 03/12/10. https://doi.org/10.1109/ISDRS.2003.1271972
Johansen J, Jin Z, Cressler JD, Cui Y, Niu G, Liang Q et al. On the scaling limits of low-frequency noise in SiGe HBTs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 12-13. 1271972 https://doi.org/10.1109/ISDRS.2003.1271972
Johansen, J. ; Jin, Z. ; Cressler, J. D. ; Cui, Y. ; Niu, G. ; Liang, Q. ; Rieh, Jae-Sung ; Freeman, G. ; Ahlgren, D. ; Joseph, A. / On the scaling limits of low-frequency noise in SiGe HBTs. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 12-13
@inproceedings{204ca0f9d5fa4b50811ea735e9474d59,
title = "On the scaling limits of low-frequency noise in SiGe HBTs",
abstract = "Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.",
author = "J. Johansen and Z. Jin and Cressler, {J. D.} and Y. Cui and G. Niu and Q. Liang and Jae-Sung Rieh and G. Freeman and D. Ahlgren and A. Joseph",
year = "2003",
doi = "10.1109/ISDRS.2003.1271972",
language = "English",
isbn = "0780381394",
pages = "12--13",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - On the scaling limits of low-frequency noise in SiGe HBTs

AU - Johansen, J.

AU - Jin, Z.

AU - Cressler, J. D.

AU - Cui, Y.

AU - Niu, G.

AU - Liang, Q.

AU - Rieh, Jae-Sung

AU - Freeman, G.

AU - Ahlgren, D.

AU - Joseph, A.

PY - 2003

Y1 - 2003

N2 - Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

AB - Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

UR - http://www.scopus.com/inward/record.url?scp=4043090768&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4043090768&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2003.1271972

DO - 10.1109/ISDRS.2003.1271972

M3 - Conference contribution

AN - SCOPUS:4043090768

SN - 0780381394

SN - 9780780381391

SP - 12

EP - 13

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -