On the scaling limits of low-frequency noise in SiGe HBTs

J. Johansen, Z. Jin, J. D. Cressler, Y. Cui, G. Niu, Q. Liang, J. S. Rieh, G. Freeman, D. Ahlgren, A. Joseph

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages12-13
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 2003 Dec 102003 Dec 12

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period03/12/1003/12/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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