One-pot fabrication of hollow SiO 2 nanowires via an electrospinning technique

Geon Hyoung An, Sang Yong Jeong, Tae Yeon Seong, Hyo Jin Ahn

Research output: Contribution to journalArticle

27 Citations (Scopus)


Hollow SiO 2 nanowires (NWs) were one-pot fabricated via an electrospinning method. Their morphologies, structures, and chemical compositions were investigated by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In order to fabricate optimum hollow SiO 2 NWs, the relative volume ratio of tetraethyl orthosilicate (TEOS, an alkoxide precursor) to ethanol (solvent) was systematically controlled from 0.02 to 0.36. SEM, HRTEM, XRD, and XPS results indicate that amorphous SiO 2 hollow NWs can be one-pot synthesized by using the volume ratio of 0.18 under a constant voltage of 8.0 kV.

Original languageEnglish
Pages (from-to)2377-2380
Number of pages4
JournalMaterials Letters
Issue number15-16
Publication statusPublished - 2011 Aug 1



  • Electrospinning
  • Hollow structures
  • Nanowire
  • SiO

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this