One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes

Yun-Hi Lee, Jong Hee Lee, Ji Young Noh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The authors report on the in situ formation of n -type ferromagnetic single wall carbon nanotube field effect transistors for the first time using a rapid heating process with a continuous flow of H2 gas under a vacuum of millitorr and their electromagnetic transport properties. The suspended n -type single wall carbon nanotube (SWNT) bridge including nanosized Fe catalyst impurities also shows gate controlled magnetic field dependent field effect behavior. The interesting features of these devices can be understood qualitatively based on the influence of the nonoxidant interface and nano Fe residing at the growth site of the SWNT bridge.

Original languageEnglish
Article number043110
JournalApplied Physics Letters
Volume92
Issue number4
DOIs
Publication statusPublished - 2008 Feb 8

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field effect transistors
carbon nanotubes
electrodes
transport properties
electromagnetism
catalysts
impurities
vacuum
heating
gases
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes. / Lee, Yun-Hi; Lee, Jong Hee; Noh, Ji Young.

In: Applied Physics Letters, Vol. 92, No. 4, 043110, 08.02.2008.

Research output: Contribution to journalArticle

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