One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4

Eun Kyu Kim, Tae Geun Kim, Chang Sik Son, Seong Il Kim, Y. K. Park, Yong Kim, Suk Ki Min, In Hoon Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CCl4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages151-154
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
Publication statusPublished - 1997 Jan 1
Externally publishedYes
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 1997 Sep 81997 Sep 11

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period97/9/897/9/11

Fingerprint

Epilayers
Substrates
Carbon tetrachloride
Carbon Tetrachloride
Metallorganic chemical vapor deposition
Atmospheric pressure
Gases
Carbon
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kim, E. K., Kim, T. G., Son, C. S., Kim, S. I., Park, Y. K., Kim, Y., ... Choi, I. H. (1997). One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 151-154). [711602] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711602

One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 . / Kim, Eun Kyu; Kim, Tae Geun; Son, Chang Sik; Kim, Seong Il; Park, Y. K.; Kim, Yong; Min, Suk Ki; Choi, In Hoon.

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 151-154 711602 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, EK, Kim, TG, Son, CS, Kim, SI, Park, YK, Kim, Y, Min, SK & Choi, IH 1997, One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711602, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 151-154, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97/9/8. https://doi.org/10.1109/ISCS.1998.711602
Kim EK, Kim TG, Son CS, Kim SI, Park YK, Kim Y et al. One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 151-154. 711602. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). https://doi.org/10.1109/ISCS.1998.711602
Kim, Eun Kyu ; Kim, Tae Geun ; Son, Chang Sik ; Kim, Seong Il ; Park, Y. K. ; Kim, Yong ; Min, Suk Ki ; Choi, In Hoon. / One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 151-154 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).
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