One transistor-one resistor devices for polymer non-volatile memory applications

Tae Wook Kim, Hyejung Choi, Seung Hwan Oh, Gunuk Wang, Dong Yu Kim, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticle

87 Citations (Scopus)

Abstract

1T-1R hybrid-type devices consisting of a silicon transistor (p-MOSFET) and a resistive polymer memory that can be used as a nonvolatile memory cell element, was demonstrated. A polymer non-volatile memory device with crosspoint architecture was fabricated on the drain side of the Si transistor, which was used as the bottom electrode. The drain current was saturated for a gate bias of -2.0 V, exhibiting typical long-channel p-MOSFET behavior. The I D-VD and drain current versus gate voltage characteristics of the IT-I R device was performed to evaluate I-V characteristics of the p-MOSFET connected to the polymer memory. The difference in drain current was about three orders of magnitude indicating that the drain current of the IT-IR device can be controlled by the resistance states of the polymer memory device, at a fluxed drain bias. Individual p-MOSFET ad polymer memory devices exhibited typical p-channel transistor and nonvolatile memory properties.

Original languageEnglish
Pages (from-to)2497-2500
Number of pages4
JournalAdvanced Materials
Volume21
Issue number24
DOIs
Publication statusPublished - 2009 Jun 26
Externally publishedYes

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Resistors
Polymers
Transistors
Data storage equipment
Drain current
Infrared devices
Silicon
Electrodes
Electric potential

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

One transistor-one resistor devices for polymer non-volatile memory applications. / Kim, Tae Wook; Choi, Hyejung; Oh, Seung Hwan; Wang, Gunuk; Kim, Dong Yu; Hwang, Hyunsang; Lee, Takhee.

In: Advanced Materials, Vol. 21, No. 24, 26.06.2009, p. 2497-2500.

Research output: Contribution to journalArticle

Kim, TW, Choi, H, Oh, SH, Wang, G, Kim, DY, Hwang, H & Lee, T 2009, 'One transistor-one resistor devices for polymer non-volatile memory applications', Advanced Materials, vol. 21, no. 24, pp. 2497-2500. https://doi.org/10.1002/adma.200803798
Kim, Tae Wook ; Choi, Hyejung ; Oh, Seung Hwan ; Wang, Gunuk ; Kim, Dong Yu ; Hwang, Hyunsang ; Lee, Takhee. / One transistor-one resistor devices for polymer non-volatile memory applications. In: Advanced Materials. 2009 ; Vol. 21, No. 24. pp. 2497-2500.
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