TY - JOUR
T1 - Opportunities and future directions for Ga2O3
AU - Mastro, Michael A.
AU - Kuramata, Akito
AU - Calkins, Jacob
AU - Kim, Jihyun
AU - Ren, Fan
AU - Pearton, S. J.
N1 - Funding Information:
The work at NRL is partially supported by DTRA grant HDTRA1-17-1-0011 and the Office of Naval Research. The project or effort depicted is sponsored by the Department of the Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. Part of the work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The work at UF is also supported by HDTRA1-17-1-0011. The research at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012140 and No. 20153030012110). We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions.
PY - 2017
Y1 - 2017
N2 - The β-polytype of Ga2O3 has a bandgap of ~4.8 eV, can be grown in bulk form from melt sources, has a high breakdown field of ∼8 MV.cm−1 and is promising for power electronics and solar blind UV detectors, as well as extreme environment electronics (high temperature, high radiation, and high voltage (low power) switching. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. There are also significant efforts worldwide to grow more complex epi structures, including β-(AlxGa1x)2O3/Ga2O3 and β-(InxGa1−x)2O3/Ga2O3 heterostructures, and thus this materials system is poised to make rapid advances in devices. To fully exploit these advantages, advances in bulk and epitaxial crystal growth, device design and processing are needed. This article provides some perspectives on these needs.
AB - The β-polytype of Ga2O3 has a bandgap of ~4.8 eV, can be grown in bulk form from melt sources, has a high breakdown field of ∼8 MV.cm−1 and is promising for power electronics and solar blind UV detectors, as well as extreme environment electronics (high temperature, high radiation, and high voltage (low power) switching. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. There are also significant efforts worldwide to grow more complex epi structures, including β-(AlxGa1x)2O3/Ga2O3 and β-(InxGa1−x)2O3/Ga2O3 heterostructures, and thus this materials system is poised to make rapid advances in devices. To fully exploit these advantages, advances in bulk and epitaxial crystal growth, device design and processing are needed. This article provides some perspectives on these needs.
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U2 - 10.1149/2.0031707jss
DO - 10.1149/2.0031707jss
M3 - Article
AN - SCOPUS:85021647411
VL - 6
SP - P356-P359
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 5
ER -