Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy

Jihyun Kim, F. Ren, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. Y. Pashova, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton

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Abstract

GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of EC - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 107 ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.

Original languageEnglish
Pages (from-to)G103-G105
JournalElectrochemical and Solid-State Letters
Volume5
Issue number11
DOIs
Publication statusPublished - 2002 Nov

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Kim, J., Ren, F., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Pashova, N. Y., Thaler, G. T., Overberg, M. E., Abernathy, C. R., & Pearton, S. J. (2002). Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy. Electrochemical and Solid-State Letters, 5(11), G103-G105. https://doi.org/10.1149/1.1511343