Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy

Ji Hyun Kim, F. Ren, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. Y. Pashova, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of EC - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 107 ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number11
DOIs
Publication statusPublished - 2002 Nov 1
Externally publishedYes

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Molecular beam epitaxy
Light absorption
optical absorption
molecular beam epitaxy
atom concentration
electrical resistivity
electrical measurement
magnetic measurement
optical spectrum
Atoms
conduction bands
energy levels
activation energy
Electron transitions
Fermi level
Conduction bands
absorption spectra
impurities
Temperature
Electron energy levels

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy. / Kim, Ji Hyun; Ren, F.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Pashova, N. Y.; Thaler, G. T.; Overberg, M. E.; Abernathy, C. R.; Pearton, S. J.

In: Electrochemical and Solid-State Letters, Vol. 5, No. 11, 01.11.2002.

Research output: Contribution to journalArticle

Kim, JH, Ren, F, Polyakov, AY, Smirnov, NB, Govorkov, AV, Pashova, NY, Thaler, GT, Overberg, ME, Abernathy, CR & Pearton, SJ 2002, 'Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy', Electrochemical and Solid-State Letters, vol. 5, no. 11. https://doi.org/10.1149/1.1511343
Kim, Ji Hyun ; Ren, F. ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Pashova, N. Y. ; Thaler, G. T. ; Overberg, M. E. ; Abernathy, C. R. ; Pearton, S. J. / Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy. In: Electrochemical and Solid-State Letters. 2002 ; Vol. 5, No. 11.
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AU - Kim, Ji Hyun

AU - Ren, F.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Pashova, N. Y.

AU - Thaler, G. T.

AU - Overberg, M. E.

AU - Abernathy, C. R.

AU - Pearton, S. J.

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AB - GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of EC - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 107 ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.

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