Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters

J. S. Kim, J. H. Jeong, J. K. Park, Y. J. Baik, I. H. Kim, Tae Yeon Seong, W. M. Kim

Research output: Contribution to journalArticle

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Abstract

The optical properties of impurity doped ZnO thin films were analyzed by taking into account the nonparabolicity in the conduction-band and the optically determined carrier concentration and mobility were correlated with those measured by Hall measurement. The Drude parameters obtained by applying a simple Drude model combined with the Lorentz oscillator model for the optical transmittance and reflectance spectrum were analyzed by using the carrier density dependent bare band effective mass determined by the first-order nonparabolicity approximation. The squared plasma energy multiplied by the carrier density dependent effective mass yielded fairly linear relationship with respect to the carrier concentration in wide carrier density range of 10 19 - 10 21 cm -3, verifying the applicability of the nonparabolicity parameter for various types of impurity doped ZnO thin films. The correlation between the optical and Hall analyses was examined by taking the ratios of optical to Hall measurements for carrier density, mobility, and resistivity by introducing a parameter, R dl, which represents the ratio of the resistances to electron transport from the inside of the lattice and from the crystallographic defects. For both the carrier concentration and mobility, the ratios of optical to Hall measurements were shown to exhibit a monotonically decreasing function of R dl, indicating that the parameter R dl could be used as a yardstick in correlating the optically determined carrier density and mobility with those measured by Hall analysis.

Original languageEnglish
Article number123507
JournalJournal of Applied Physics
Volume111
Issue number12
DOIs
Publication statusPublished - 2012 Jun 15

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conduction bands
thin films
impurities
carrier mobility
transmittance
oscillators
reflectance
optical properties
electrical resistivity
defects
approximation
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, J. S., Jeong, J. H., Park, J. K., Baik, Y. J., Kim, I. H., Seong, T. Y., & Kim, W. M. (2012). Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters. Journal of Applied Physics, 111(12), [123507]. https://doi.org/10.1063/1.4729571

Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters. / Kim, J. S.; Jeong, J. H.; Park, J. K.; Baik, Y. J.; Kim, I. H.; Seong, Tae Yeon; Kim, W. M.

In: Journal of Applied Physics, Vol. 111, No. 12, 123507, 15.06.2012.

Research output: Contribution to journalArticle

Kim, J. S. ; Jeong, J. H. ; Park, J. K. ; Baik, Y. J. ; Kim, I. H. ; Seong, Tae Yeon ; Kim, W. M. / Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters. In: Journal of Applied Physics. 2012 ; Vol. 111, No. 12.
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