Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

Young Joon Han, Kunsik An, Kyung Tae Kang, Byeong Kwon Ju, Kwan Hyun Cho

Research output: Contribution to journalArticle


In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.

Original languageEnglish
Article number10385
JournalScientific reports
Issue number1
Publication statusPublished - 2019 Dec 1


ASJC Scopus subject areas

  • General

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