Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Hong Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas, Soohwan Jang, Jennifer Hite, Charles R. Eddy, Ji Hyun Kim

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An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2011 Jul 1



  • A1. Photoluminescence
  • A1. Radiation
  • B2. Semiconducting Gallium Compounds
  • B3. High Electron Mobility Transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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