Abstract
An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.
| Original language | English |
|---|---|
| Pages (from-to) | 62-64 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 326 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Jul 1 |
Keywords
- A1. Photoluminescence
- A1. Radiation
- B2. Semiconducting Gallium Compounds
- B3. High Electron Mobility Transistor
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Cite this
Kim, H. Y., Anderson, T., Mastro, M. A., Freitas, J. A., Jang, S., Hite, J., Eddy, C. R., & Kim, J. (2011). Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons. Journal of Crystal Growth, 326(1), 62-64. https://doi.org/10.1016/j.jcrysgro.2011.01.052