Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Hong Yeol Kim; Travis Anderson; Michael A. Mastro; Jaime A. Freitas; Soohwan Jang; Jennifer Hite; Charles R. Eddy; Jihyun Kim

doi:10.1016/j.jcrysgro.2011.01.052

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Hong Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas, Soohwan Jang, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×10¹⁵/cm². Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An I_DSV_DS measurement showed that the current level was decreased by 43% after proton irradiation, and an I_GSV_GS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.

Original language	English
Pages (from-to)	62-64
Number of pages	3
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.052
Publication status	Published - 2011 Jul 1

Keywords

A1. Photoluminescence
A1. Radiation
B2. Semiconducting Gallium Compounds
B3. High Electron Mobility Transistor

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.01.052

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@article{58158af13b2c48dab1582938d44f66bb,

title = "Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons",

abstract = "An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.",

keywords = "A1. Photoluminescence, A1. Radiation, B2. Semiconducting Gallium Compounds, B3. High Electron Mobility Transistor",

author = "Kim, {Hong Yeol} and Travis Anderson and Mastro, {Michael A.} and Freitas, {Jaime A.} and Soohwan Jang and Jennifer Hite and Eddy, {Charles R.} and Jihyun Kim",

note = "Funding Information: The research at Korea University was supported by Korea Science and Engineering Foundation grant funded by the Korean government (MEST). (Grant code: M2AB02) and BK21 program and was carried out using MC-50 cyclotron at the Korea Institute of Radiological and Medical sciences. The research at NRL was supported by the Office of Naval Research and Office of Naval Research–Global ( 62909-09-1-4060 ).",

year = "2011",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2011.01.052",

language = "English",

volume = "326",

pages = "62--64",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

AU - Kim, Hong Yeol

AU - Anderson, Travis

AU - Mastro, Michael A.

AU - Freitas, Jaime A.

AU - Jang, Soohwan

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Kim, Jihyun

N1 - Funding Information: The research at Korea University was supported by Korea Science and Engineering Foundation grant funded by the Korean government (MEST). (Grant code: M2AB02) and BK21 program and was carried out using MC-50 cyclotron at the Korea Institute of Radiological and Medical sciences. The research at NRL was supported by the Office of Naval Research and Office of Naval Research–Global ( 62909-09-1-4060 ).

PY - 2011/7/1

Y1 - 2011/7/1

N2 - An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.

AB - An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.

KW - A1. Photoluminescence

KW - A1. Radiation

KW - B2. Semiconducting Gallium Compounds

KW - B3. High Electron Mobility Transistor

UR - http://www.scopus.com/inward/record.url?scp=79960190781&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.01.052

DO - 10.1016/j.jcrysgro.2011.01.052

M3 - Article

AN - SCOPUS:79960190781

VL - 326

SP - 62

EP - 64

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Abstract

Keywords

ASJC Scopus subject areas

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