Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Hong Yeol Kim; Travis Anderson; Michael A. Mastro; Jaime A. Freitas; Soohwan Jang; Jennifer Hite; Charles R. Eddy; Jihyun Kim

doi:10.1016/j.jcrysgro.2011.01.052

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Hong Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas, Soohwan Jang, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×10¹⁵/cm². Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An I_DSV_DS measurement showed that the current level was decreased by 43% after proton irradiation, and an I_GSV_GS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.

Original language	English
Pages (from-to)	62-64
Number of pages	3
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.052
Publication status	Published - 2011 Jul 1

Keywords

A1. Photoluminescence
A1. Radiation
B2. Semiconducting Gallium Compounds
B3. High Electron Mobility Transistor

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons. / Kim, Hong Yeol; Anderson, Travis; Mastro, Michael A.; Freitas, Jaime A.; Jang, Soohwan; Hite, Jennifer; Eddy, Charles R.; Kim, Jihyun.

In: Journal of Crystal Growth, Vol. 326, No. 1, 01.07.2011, p. 62-64.

Research output: Contribution to journal › Article › peer-review

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abstract = "An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.",

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AU - Anderson, Travis

AU - Mastro, Michael A.

AU - Freitas, Jaime A.

AU - Jang, Soohwan

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Kim, Jihyun

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