Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Hong Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas, Soohwan Jang, Jennifer Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
JournalJournal of Crystal Growth
Volume326
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

Fingerprint

Proton irradiation
proton irradiation
High electron mobility transistors
high electron mobility transistors
Protons
protons
healing
proton energy
proximity
Photoluminescence
Transistors
transistors
damage
photoluminescence
dosage
collisions
Metals
metals
aluminum gallium nitride

Keywords

  • A1. Photoluminescence
  • A1. Radiation
  • B2. Semiconducting Gallium Compounds
  • B3. High Electron Mobility Transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons. / Kim, Hong Yeol; Anderson, Travis; Mastro, Michael A.; Freitas, Jaime A.; Jang, Soohwan; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.

In: Journal of Crystal Growth, Vol. 326, No. 1, 01.07.2011, p. 62-64.

Research output: Contribution to journalArticle

Kim, Hong Yeol ; Anderson, Travis ; Mastro, Michael A. ; Freitas, Jaime A. ; Jang, Soohwan ; Hite, Jennifer ; Eddy, Charles R. ; Kim, Ji Hyun. / Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons. In: Journal of Crystal Growth. 2011 ; Vol. 326, No. 1. pp. 62-64.
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AU - Freitas, Jaime A.

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AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Kim, Ji Hyun

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