Abstract
An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.
| Original language | English |
|---|---|
| Pages (from-to) | 62-64 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 326 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Jul 1 |
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Keywords
- A1. Photoluminescence
- A1. Radiation
- B2. Semiconducting Gallium Compounds
- B3. High Electron Mobility Transistor
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Cite this
Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons. / Kim, Hong Yeol; Anderson, Travis; Mastro, Michael A.; Freitas, Jaime A.; Jang, Soohwan; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.
In: Journal of Crystal Growth, Vol. 326, No. 1, 01.07.2011, p. 62-64.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons
AU - Kim, Hong Yeol
AU - Anderson, Travis
AU - Mastro, Michael A.
AU - Freitas, Jaime A.
AU - Jang, Soohwan
AU - Hite, Jennifer
AU - Eddy, Charles R.
AU - Kim, Ji Hyun
PY - 2011/7/1
Y1 - 2011/7/1
N2 - An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.
AB - An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An IDSVDS measurement showed that the current level was decreased by 43% after proton irradiation, and an IGSVGS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface.
KW - A1. Photoluminescence
KW - A1. Radiation
KW - B2. Semiconducting Gallium Compounds
KW - B3. High Electron Mobility Transistor
UR - http://www.scopus.com/inward/record.url?scp=79960190781&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960190781&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2011.01.052
DO - 10.1016/j.jcrysgro.2011.01.052
M3 - Article
AN - SCOPUS:79960190781
VL - 326
SP - 62
EP - 64
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -