Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

I. A. Buyanova, M. Izadifard, L. Storasta, W. M. Chen, Jihyun Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

(Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

Original languageEnglish
Pages (from-to)467-471
Number of pages5
JournalJournal of Electronic Materials
Volume33
Issue number5
DOIs
Publication statusPublished - 2004 May

    Fingerprint

Keywords

  • (Ga,Mn)N/InGaN
  • Light-emitting diode (LED)
  • Molecular beam epitaxy (MBE)
  • Multiquantum well (MQW)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Buyanova, I. A., Izadifard, M., Storasta, L., Chen, W. M., Kim, J., Ren, F., Thaler, G., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., Chyi, J. I., & Zavada, J. M. (2004). Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes. Journal of Electronic Materials, 33(5), 467-471. https://doi.org/10.1007/s11664-004-0204-9