Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

I. A. Buyanova, M. Izadifard, L. Storasta, W. M. Chen, Ji Hyun Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

(Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

Original languageEnglish
Pages (from-to)467-471
Number of pages5
JournalJournal of Electronic Materials
Volume33
Issue number5
Publication statusPublished - 2004 May 1
Externally publishedYes

Fingerprint

Light emitting diodes
Diodes
Spin polarization
light emitting diodes
Light polarization
Population distribution
Photoexcitation
Light emission
Relaxation processes
Current voltage characteristics
Molecular beam epitaxy
Excitons
Ground state
diodes
Energy gap
Photons
Doping (additives)
Polarization
Temperature
polarization

Keywords

  • (Ga,Mn)N/InGaN
  • Light-emitting diode (LED)
  • Molecular beam epitaxy (MBE)
  • Multiquantum well (MQW)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Buyanova, I. A., Izadifard, M., Storasta, L., Chen, W. M., Kim, J. H., Ren, F., ... Zavada, J. M. (2004). Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes. Journal of Electronic Materials, 33(5), 467-471.

Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes. / Buyanova, I. A.; Izadifard, M.; Storasta, L.; Chen, W. M.; Kim, Ji Hyun; Ren, F.; Thaler, G.; Abernathy, C. R.; Pearton, S. J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.; Zavada, J. M.

In: Journal of Electronic Materials, Vol. 33, No. 5, 01.05.2004, p. 467-471.

Research output: Contribution to journalArticle

Buyanova, IA, Izadifard, M, Storasta, L, Chen, WM, Kim, JH, Ren, F, Thaler, G, Abernathy, CR, Pearton, SJ, Pan, CC, Chen, GT, Chyi, JI & Zavada, JM 2004, 'Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes', Journal of Electronic Materials, vol. 33, no. 5, pp. 467-471.
Buyanova, I. A. ; Izadifard, M. ; Storasta, L. ; Chen, W. M. ; Kim, Ji Hyun ; Ren, F. ; Thaler, G. ; Abernathy, C. R. ; Pearton, S. J. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. ; Zavada, J. M. / Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes. In: Journal of Electronic Materials. 2004 ; Vol. 33, No. 5. pp. 467-471.
@article{5b5b7bdc962543838ab6ef44c368a3fc,
title = "Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes",
abstract = "(Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10{\%} at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.",
keywords = "(Ga,Mn)N/InGaN, Light-emitting diode (LED), Molecular beam epitaxy (MBE), Multiquantum well (MQW)",
author = "Buyanova, {I. A.} and M. Izadifard and L. Storasta and Chen, {W. M.} and Kim, {Ji Hyun} and F. Ren and G. Thaler and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Zavada, {J. M.}",
year = "2004",
month = "5",
day = "1",
language = "English",
volume = "33",
pages = "467--471",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

TY - JOUR

T1 - Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

AU - Buyanova, I. A.

AU - Izadifard, M.

AU - Storasta, L.

AU - Chen, W. M.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Thaler, G.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Zavada, J. M.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - (Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

AB - (Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

KW - (Ga,Mn)N/InGaN

KW - Light-emitting diode (LED)

KW - Molecular beam epitaxy (MBE)

KW - Multiquantum well (MQW)

UR - http://www.scopus.com/inward/record.url?scp=2442675717&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442675717&partnerID=8YFLogxK

M3 - Article

VL - 33

SP - 467

EP - 471

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -