Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

A. Y. Polyakov; A. V. Govorkov; N. B. Smirnov; N. Y. Pashkova; G. T. Thaler; M. E. Overberg; R. Frazier; C. R. Abernathy; S. J. Pearton; Jihyun Kim; F. Ren

doi:10.1063/1.1510597

Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, N. Y. Pashkova, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, Jihyun Kim, F. Ren

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Optical absorption spectra, microcathodoluminescence (MCL) spectra, and electrical properties of GaMnN films grown by molecular-beam epitaxy with Mn concentration in the range of 3 to 10 at.% were studied. Optical absorption and MCL spectra show the presence of strong bands corresponding to the transition from the Mn acceptors near E _c-2eV to the conduction band. The other strong band observed in MCL measurements was the blue band peaked near 2.9 eV and associated with the transition from the valence band to deep donors with a level near E _c-0.5eV. All GaMnN samples were shown to be lightly n-type which suggests close self-compensation of the Mn acceptors by some native defect donors. A plausible scenario is that such compensating donors could be due to nitrogen vacancies and that the E _c-0.5eV donor defects are complexes between the Mn acceptors and the nitrogen vacancy donors.

Original language	English
Pages (from-to)	4989-4993
Number of pages	5
Journal	Journal of Applied Physics
Volume	92
Issue number	9
DOIs	https://doi.org/10.1063/1.1510597
Publication status	Published - 2002 Nov 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy",

abstract = "Optical absorption spectra, microcathodoluminescence (MCL) spectra, and electrical properties of GaMnN films grown by molecular-beam epitaxy with Mn concentration in the range of 3 to 10 at.% were studied. Optical absorption and MCL spectra show the presence of strong bands corresponding to the transition from the Mn acceptors near E c-2eV to the conduction band. The other strong band observed in MCL measurements was the blue band peaked near 2.9 eV and associated with the transition from the valence band to deep donors with a level near E c-0.5eV. All GaMnN samples were shown to be lightly n-type which suggests close self-compensation of the Mn acceptors by some native defect donors. A plausible scenario is that such compensating donors could be due to nitrogen vacancies and that the E c-0.5eV donor defects are complexes between the Mn acceptors and the nitrogen vacancy donors.",

author = "Polyakov, {A. Y.} and Govorkov, {A. V.} and Smirnov, {N. B.} and Pashkova, {N. Y.} and Thaler, {G. T.} and Overberg, {M. E.} and R. Frazier and Abernathy, {C. R.} and Pearton, {S. J.} and Jihyun Kim and F. Ren",

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month = nov,

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doi = "10.1063/1.1510597",

language = "English",

volume = "92",

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TY - JOUR

T1 - Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

AU - Polyakov, A. Y.

AU - Govorkov, A. V.

AU - Smirnov, N. B.

AU - Pashkova, N. Y.

AU - Thaler, G. T.

AU - Overberg, M. E.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Kim, Jihyun

AU - Ren, F.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Optical absorption spectra, microcathodoluminescence (MCL) spectra, and electrical properties of GaMnN films grown by molecular-beam epitaxy with Mn concentration in the range of 3 to 10 at.% were studied. Optical absorption and MCL spectra show the presence of strong bands corresponding to the transition from the Mn acceptors near E c-2eV to the conduction band. The other strong band observed in MCL measurements was the blue band peaked near 2.9 eV and associated with the transition from the valence band to deep donors with a level near E c-0.5eV. All GaMnN samples were shown to be lightly n-type which suggests close self-compensation of the Mn acceptors by some native defect donors. A plausible scenario is that such compensating donors could be due to nitrogen vacancies and that the E c-0.5eV donor defects are complexes between the Mn acceptors and the nitrogen vacancy donors.

AB - Optical absorption spectra, microcathodoluminescence (MCL) spectra, and electrical properties of GaMnN films grown by molecular-beam epitaxy with Mn concentration in the range of 3 to 10 at.% were studied. Optical absorption and MCL spectra show the presence of strong bands corresponding to the transition from the Mn acceptors near E c-2eV to the conduction band. The other strong band observed in MCL measurements was the blue band peaked near 2.9 eV and associated with the transition from the valence band to deep donors with a level near E c-0.5eV. All GaMnN samples were shown to be lightly n-type which suggests close self-compensation of the Mn acceptors by some native defect donors. A plausible scenario is that such compensating donors could be due to nitrogen vacancies and that the E c-0.5eV donor defects are complexes between the Mn acceptors and the nitrogen vacancy donors.

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U2 - 10.1063/1.1510597

DO - 10.1063/1.1510597

M3 - Article

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SN - 0021-8979

VL - 92

SP - 4989

EP - 4993

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

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