Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, N. Y. Pashkova, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, Ji Hyun Kim, F. Ren

Research output: Contribution to journalArticle

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Abstract

Optical absorption spectra, microcathodoluminescence (MCL) spectra, and electrical properties of GaMnN films grown by molecular-beam epitaxy with Mn concentration in the range of 3 to 10 at.% were studied. Optical absorption and MCL spectra show the presence of strong bands corresponding to the transition from the Mn acceptors near E c-2eV to the conduction band. The other strong band observed in MCL measurements was the blue band peaked near 2.9 eV and associated with the transition from the valence band to deep donors with a level near E c-0.5eV. All GaMnN samples were shown to be lightly n-type which suggests close self-compensation of the Mn acceptors by some native defect donors. A plausible scenario is that such compensating donors could be due to nitrogen vacancies and that the E c-0.5eV donor defects are complexes between the Mn acceptors and the nitrogen vacancy donors.

Original languageEnglish
Pages (from-to)4989-4993
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number9
DOIs
Publication statusPublished - 2002 Nov 1
Externally publishedYes

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molecular beam epitaxy
electrical properties
optical properties
optical spectrum
optical absorption
absorption spectra
nitrogen
defects
conduction bands
valence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., Pashkova, N. Y., Thaler, G. T., Overberg, M. E., ... Ren, F. (2002). Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy. Journal of Applied Physics, 92(9), 4989-4993. https://doi.org/10.1063/1.1510597

Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy. / Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Pashkova, N. Y.; Thaler, G. T.; Overberg, M. E.; Frazier, R.; Abernathy, C. R.; Pearton, S. J.; Kim, Ji Hyun; Ren, F.

In: Journal of Applied Physics, Vol. 92, No. 9, 01.11.2002, p. 4989-4993.

Research output: Contribution to journalArticle

Polyakov, AY, Govorkov, AV, Smirnov, NB, Pashkova, NY, Thaler, GT, Overberg, ME, Frazier, R, Abernathy, CR, Pearton, SJ, Kim, JH & Ren, F 2002, 'Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy', Journal of Applied Physics, vol. 92, no. 9, pp. 4989-4993. https://doi.org/10.1063/1.1510597
Polyakov AY, Govorkov AV, Smirnov NB, Pashkova NY, Thaler GT, Overberg ME et al. Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy. Journal of Applied Physics. 2002 Nov 1;92(9):4989-4993. https://doi.org/10.1063/1.1510597
Polyakov, A. Y. ; Govorkov, A. V. ; Smirnov, N. B. ; Pashkova, N. Y. ; Thaler, G. T. ; Overberg, M. E. ; Frazier, R. ; Abernathy, C. R. ; Pearton, S. J. ; Kim, Ji Hyun ; Ren, F. / Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 9. pp. 4989-4993.
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AU - Thaler, G. T.

AU - Overberg, M. E.

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