Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al 2 O 3

Ji Hyuk Choi, Jungwoo Kim, Soong Ju Oh, Daekyoung Kim, Yong Hoon Kim, Heeyeop Chae, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al 2 O 3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al 2 O 3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al 2 O 3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.

Original languageEnglish
Pages (from-to)723-729
Number of pages7
JournalMetals and Materials International
Volume22
Issue number4
DOIs
Publication statusPublished - 2016 Jul 1

Keywords

  • electrical/electronic materials, nanostructured materials, chemical synthesis, doping, surface passivation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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