Optical and field emission properties of thin single-crystalline GaN nanowires

Byeongchul Ha, Sung Ho Seo, Jung Hee Cho, Chong S. Yoon, Jinkyoung Yoo, Gyu Chul Yi, Chong Yun Park, Cheol Jin Lee

Research output: Contribution to journalArticle

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Abstract

Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/μm and the current density was about 0.2 mA/cm2 at 17.5 V/μm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.

Original languageEnglish
Pages (from-to)11095-11099
Number of pages5
JournalJournal of Physical Chemistry B
Volume109
Issue number22
DOIs
Publication statusPublished - 2005 Jun 9
Externally publishedYes

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Gallium nitride
gallium nitrides
Field emission
Nanowires
light emission
field emission
nanowires
Crystalline materials
Excitons
excitons
Field emission displays
Carbon Nanotubes
Quantum confinement
gallium nitride
blue shift
microelectronics
Microelectronics
micrometers
Chemical vapor deposition
Carbon nanotubes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Optical and field emission properties of thin single-crystalline GaN nanowires. / Ha, Byeongchul; Seo, Sung Ho; Cho, Jung Hee; Yoon, Chong S.; Yoo, Jinkyoung; Yi, Gyu Chul; Park, Chong Yun; Lee, Cheol Jin.

In: Journal of Physical Chemistry B, Vol. 109, No. 22, 09.06.2005, p. 11095-11099.

Research output: Contribution to journalArticle

Ha, B, Seo, SH, Cho, JH, Yoon, CS, Yoo, J, Yi, GC, Park, CY & Lee, CJ 2005, 'Optical and field emission properties of thin single-crystalline GaN nanowires', Journal of Physical Chemistry B, vol. 109, no. 22, pp. 11095-11099. https://doi.org/10.1021/jp044334c
Ha, Byeongchul ; Seo, Sung Ho ; Cho, Jung Hee ; Yoon, Chong S. ; Yoo, Jinkyoung ; Yi, Gyu Chul ; Park, Chong Yun ; Lee, Cheol Jin. / Optical and field emission properties of thin single-crystalline GaN nanowires. In: Journal of Physical Chemistry B. 2005 ; Vol. 109, No. 22. pp. 11095-11099.
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AU - Yoo, Jinkyoung

AU - Yi, Gyu Chul

AU - Park, Chong Yun

AU - Lee, Cheol Jin

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N2 - Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/μm and the current density was about 0.2 mA/cm2 at 17.5 V/μm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.

AB - Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/μm and the current density was about 0.2 mA/cm2 at 17.5 V/μm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.

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