Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

Sang Mook Kim, Jae Bum Kim, Junggeun Jhin, Jong Hyeob Baek, In-Hwan Lee, Gun Young Jung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

Original languageEnglish
Pages (from-to)1911-1913
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number23
DOIs
Publication statusPublished - 2008 Nov 1
Externally publishedYes

Fingerprint

ultraviolet radiation
Light emitting diodes
Structural properties
light emitting diodes
Optical properties
optical properties
Aluminum Oxide
chips
Sapphire
sapphire
aluminum gallium nitride
Ultraviolet Rays
output
Substrates
injection
Wavelength
augmentation
wavelengths
simulation

Keywords

  • AlGaN
  • flip-chip
  • light-emitting diodes (LEDs)
  • patterned sapphire substrate (PSS)
  • silicon optical bench (SiOB)
  • ultraviolet (UV)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes. / Kim, Sang Mook; Kim, Jae Bum; Jhin, Junggeun; Baek, Jong Hyeob; Lee, In-Hwan; Jung, Gun Young.

In: IEEE Photonics Technology Letters, Vol. 20, No. 23, 01.11.2008, p. 1911-1913.

Research output: Contribution to journalArticle

Kim, Sang Mook ; Kim, Jae Bum ; Jhin, Junggeun ; Baek, Jong Hyeob ; Lee, In-Hwan ; Jung, Gun Young. / Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes. In: IEEE Photonics Technology Letters. 2008 ; Vol. 20, No. 23. pp. 1911-1913.
@article{9864aa5d523f41e6b643bd865f50b2e9,
title = "Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes",
abstract = "We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97{\%} and 451{\%} compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.",
keywords = "AlGaN, flip-chip, light-emitting diodes (LEDs), patterned sapphire substrate (PSS), silicon optical bench (SiOB), ultraviolet (UV)",
author = "Kim, {Sang Mook} and Kim, {Jae Bum} and Junggeun Jhin and Baek, {Jong Hyeob} and In-Hwan Lee and Jung, {Gun Young}",
year = "2008",
month = "11",
day = "1",
doi = "10.1109/LPT.2008.2004700",
language = "English",
volume = "20",
pages = "1911--1913",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "23",

}

TY - JOUR

T1 - Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

AU - Kim, Sang Mook

AU - Kim, Jae Bum

AU - Jhin, Junggeun

AU - Baek, Jong Hyeob

AU - Lee, In-Hwan

AU - Jung, Gun Young

PY - 2008/11/1

Y1 - 2008/11/1

N2 - We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

AB - We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

KW - AlGaN

KW - flip-chip

KW - light-emitting diodes (LEDs)

KW - patterned sapphire substrate (PSS)

KW - silicon optical bench (SiOB)

KW - ultraviolet (UV)

UR - http://www.scopus.com/inward/record.url?scp=85008028646&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008028646&partnerID=8YFLogxK

U2 - 10.1109/LPT.2008.2004700

DO - 10.1109/LPT.2008.2004700

M3 - Article

AN - SCOPUS:85008028646

VL - 20

SP - 1911

EP - 1913

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 23

ER -