We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 1999 Nov|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics