Optical and structural studies of phase separation in InGaN film grown by MOCVD

Yong T. Moon, Dong Joon Kim, Keun M. Song, In-Hwan Lee, Min S. Yi, Do Young Noh, Chel Jong Choi, Tae Yeon Seong, Seong J. Park

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
Publication statusPublished - 1999 Nov 1
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
Phase separation
metalorganic chemical vapor deposition
Growth temperature
Film thickness
film thickness
Doping (additives)
Chemical analysis
Photoluminescence
photoluminescence
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Moon, Y. T., Kim, D. J., Song, K. M., Lee, I-H., Yi, M. S., Noh, D. Y., ... Park, S. J. (1999). Optical and structural studies of phase separation in InGaN film grown by MOCVD. Physica Status Solidi (B) Basic Research, 216(1), 167-170.

Optical and structural studies of phase separation in InGaN film grown by MOCVD. / Moon, Yong T.; Kim, Dong Joon; Song, Keun M.; Lee, In-Hwan; Yi, Min S.; Noh, Do Young; Choi, Chel Jong; Seong, Tae Yeon; Park, Seong J.

In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 01.11.1999, p. 167-170.

Research output: Contribution to journalArticle

Moon, YT, Kim, DJ, Song, KM, Lee, I-H, Yi, MS, Noh, DY, Choi, CJ, Seong, TY & Park, SJ 1999, 'Optical and structural studies of phase separation in InGaN film grown by MOCVD', Physica Status Solidi (B) Basic Research, vol. 216, no. 1, pp. 167-170.
Moon, Yong T. ; Kim, Dong Joon ; Song, Keun M. ; Lee, In-Hwan ; Yi, Min S. ; Noh, Do Young ; Choi, Chel Jong ; Seong, Tae Yeon ; Park, Seong J. / Optical and structural studies of phase separation in InGaN film grown by MOCVD. In: Physica Status Solidi (B) Basic Research. 1999 ; Vol. 216, No. 1. pp. 167-170.
@article{e0e3e2c656b0435b90041af779358070,
title = "Optical and structural studies of phase separation in InGaN film grown by MOCVD",
abstract = "We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.",
author = "Moon, {Yong T.} and Kim, {Dong Joon} and Song, {Keun M.} and In-Hwan Lee and Yi, {Min S.} and Noh, {Do Young} and Choi, {Chel Jong} and Seong, {Tae Yeon} and Park, {Seong J.}",
year = "1999",
month = "11",
day = "1",
language = "English",
volume = "216",
pages = "167--170",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Optical and structural studies of phase separation in InGaN film grown by MOCVD

AU - Moon, Yong T.

AU - Kim, Dong Joon

AU - Song, Keun M.

AU - Lee, In-Hwan

AU - Yi, Min S.

AU - Noh, Do Young

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Park, Seong J.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

AB - We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

UR - http://www.scopus.com/inward/record.url?scp=0033242889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033242889&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033242889

VL - 216

SP - 167

EP - 170

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -