Optical and structural studies of phase separation in InGaN film grown by MOCVD

Yong Tae Moon, Dong Joon Kim, Keun Man Song, In Hwan Lee, Min Su Yi, Do Young Noh, Chel Jong Choi, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
Publication statusPublished - 1999 Nov

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Optical and structural studies of phase separation in InGaN film grown by MOCVD'. Together they form a unique fingerprint.

  • Cite this