Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells

S. L. Wong, R. W. Martin, M. Lakrimi, R. J. Nicholas, Tae Yeon Seong, N. J. Mason, P. J. Walker

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Magneto-optical and magnetotransport studies have been conducted on a series of strained single Ga1-xInxSb/GaSb quantum wells grown along [001], [111]A, and [111]B directions by metal organic chemical vapor deposition. Both the interband transition energies and the two-dimensional carrier density show dramatic differences between the three orientations. Self-consistent calculations including the strain-induced piezoelectric field and the effect of band bending have been performed for the [111] structures. Results of the calculations agree very well with the observed dependences on indium content in the wells, well width, and cap thickness. The difference between [001] and [111] samples is due mainly to the presence of the piezoelectric field in the latter. The surface pinning field which is different in both direction and magnitude in the [111]A and [111]B structures contributes to the significant difference in these two orientations for cap thicknesses below 500 .

Original languageEnglish
Pages (from-to)17885-17891
Number of pages7
JournalPhysical Review B
Volume48
Issue number24
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

Fingerprint

caps
Transport properties
Semiconductor quantum wells
Optical properties
transport properties
quantum wells
Organic Chemicals
optical properties
Galvanomagnetic effects
Indium
Organic chemicals
metalorganic chemical vapor deposition
Carrier concentration
indium
Chemical vapor deposition
Metals
Direction compound
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Wong, S. L., Martin, R. W., Lakrimi, M., Nicholas, R. J., Seong, T. Y., Mason, N. J., & Walker, P. J. (1993). Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells. Physical Review B, 48(24), 17885-17891. https://doi.org/10.1103/PhysRevB.48.17885

Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells. / Wong, S. L.; Martin, R. W.; Lakrimi, M.; Nicholas, R. J.; Seong, Tae Yeon; Mason, N. J.; Walker, P. J.

In: Physical Review B, Vol. 48, No. 24, 01.12.1993, p. 17885-17891.

Research output: Contribution to journalArticle

Wong, SL, Martin, RW, Lakrimi, M, Nicholas, RJ, Seong, TY, Mason, NJ & Walker, PJ 1993, 'Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells', Physical Review B, vol. 48, no. 24, pp. 17885-17891. https://doi.org/10.1103/PhysRevB.48.17885
Wong, S. L. ; Martin, R. W. ; Lakrimi, M. ; Nicholas, R. J. ; Seong, Tae Yeon ; Mason, N. J. ; Walker, P. J. / Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells. In: Physical Review B. 1993 ; Vol. 48, No. 24. pp. 17885-17891.
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