Magneto-optical and magnetotransport studies have been conducted on a series of strained single Ga1-xInxSb/GaSb quantum wells grown along , A, and B directions by metal organic chemical vapor deposition. Both the interband transition energies and the two-dimensional carrier density show dramatic differences between the three orientations. Self-consistent calculations including the strain-induced piezoelectric field and the effect of band bending have been performed for the  structures. Results of the calculations agree very well with the observed dependences on indium content in the wells, well width, and cap thickness. The difference between  and  samples is due mainly to the presence of the piezoelectric field in the latter. The surface pinning field which is different in both direction and magnitude in the A and B structures contributes to the significant difference in these two orientations for cap thicknesses below 500 .
ASJC Scopus subject areas
- Condensed Matter Physics