Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells

S. L. Wong, R. W. Martin, M. Lakrimi, R. J. Nicholas, Tae Yeon Seong, N. J. Mason, P. J. Walker

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Magneto-optical and magnetotransport studies have been conducted on a series of strained single Ga1-xInxSb/GaSb quantum wells grown along [001], [111]A, and [111]B directions by metal organic chemical vapor deposition. Both the interband transition energies and the two-dimensional carrier density show dramatic differences between the three orientations. Self-consistent calculations including the strain-induced piezoelectric field and the effect of band bending have been performed for the [111] structures. Results of the calculations agree very well with the observed dependences on indium content in the wells, well width, and cap thickness. The difference between [001] and [111] samples is due mainly to the presence of the piezoelectric field in the latter. The surface pinning field which is different in both direction and magnitude in the [111]A and [111]B structures contributes to the significant difference in these two orientations for cap thicknesses below 500 .

Original languageEnglish
Pages (from-to)17885-17891
Number of pages7
JournalPhysical Review B
Issue number24
Publication statusPublished - 1993 Dec 1
Externally publishedYes


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Wong, S. L., Martin, R. W., Lakrimi, M., Nicholas, R. J., Seong, T. Y., Mason, N. J., & Walker, P. J. (1993). Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells. Physical Review B, 48(24), 17885-17891. https://doi.org/10.1103/PhysRevB.48.17885