Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes

Kyoung Chan Kim, Ii Ki Han, Young Chae Yoo, Jung Il Lee, Yun Mo Sung, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.

Original languageEnglish
Article number4420097
Pages (from-to)135-139
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume7
Issue number2
DOIs
Publication statusPublished - 2008 Mar 1

Fingerprint

Quantum dot lasers
Linewidth
Semiconductor lasers
Wavelength
Beam quality
Excited states
Ground state
Lasers

Keywords

  • Differential gain
  • Laser diodes (LDs)
  • Linewidth enhancement factor
  • Quantum dot (QD)

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

Cite this

Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes. / Kim, Kyoung Chan; Han, Ii Ki; Yoo, Young Chae; Lee, Jung Il; Sung, Yun Mo; Kim, Tae Geun.

In: IEEE Transactions on Nanotechnology, Vol. 7, No. 2, 4420097, 01.03.2008, p. 135-139.

Research output: Contribution to journalArticle

@article{03d861de5b684b499e2d9066ea57ea86,
title = "Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes",
abstract = "We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.",
keywords = "Differential gain, Laser diodes (LDs), Linewidth enhancement factor, Quantum dot (QD)",
author = "Kim, {Kyoung Chan} and Han, {Ii Ki} and Yoo, {Young Chae} and Lee, {Jung Il} and Sung, {Yun Mo} and Kim, {Tae Geun}",
year = "2008",
month = "3",
day = "1",
doi = "10.1109/TNANO.2007.914978",
language = "English",
volume = "7",
pages = "135--139",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes

AU - Kim, Kyoung Chan

AU - Han, Ii Ki

AU - Yoo, Young Chae

AU - Lee, Jung Il

AU - Sung, Yun Mo

AU - Kim, Tae Geun

PY - 2008/3/1

Y1 - 2008/3/1

N2 - We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.

AB - We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.

KW - Differential gain

KW - Laser diodes (LDs)

KW - Linewidth enhancement factor

KW - Quantum dot (QD)

UR - http://www.scopus.com/inward/record.url?scp=41149091106&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149091106&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2007.914978

DO - 10.1109/TNANO.2007.914978

M3 - Article

AN - SCOPUS:41149091106

VL - 7

SP - 135

EP - 139

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 2

M1 - 4420097

ER -