Optical characterizations of GaN nanorods fabricated by natural lithography

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Abstract

We fabricated GaN/Sapphire nanorods by nanosphere lithography (NSL) using SiO2 nanospheres. Arrays of SiO2 nanospheres were packed on GaN, followed by dry-etching via inductively coupled plasma (ICP) etching. SiO2 nanospheres served as the etching mask under our etching conditions. Finally, a sapphire substrate under GaN was exposed by dry-etching. A significant blue shift was observed in the room temperature photoluminescence (PL) spectrum from GaN/Sapphire nanorods when the underlying Al2O3 was exposed. GaN nanorods were fabricated by simple and reproducible methods, where SiO2 nanospheres were successfully used as the etching mask. In addition, a blueshift in PL by the band-filling effect was observed due to the GaN nanostructures.

Original languageEnglish
Pages (from-to)693-696
Number of pages4
JournalKorean Journal of Chemical Engineering
Volume27
Issue number2
DOIs
Publication statusPublished - 2010 Mar 1

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Keywords

  • Band Filling
  • Nanorods
  • Natural Lithography
  • Quantum Effects

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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