Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe

C. S. Kim, M. Kim, Sang Hoon Lee, J. K. Furdyna, M. Dobrowolska, H. Rho, L. M. Smith, Howard E. Jackson

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The evolution of CdSe quantum dot (QD) formation on ZnSe was investigated on a series of samples grown by MBE, with nominal CdSe coverages ranging from 1.1 to 2.6 monolayers (ML). Micro-PL data suggest strongly confined zero-dimensional excitons even for coverages as low as 1.1 ML. PL and micro-PL data show emission from the QDs as well as from an accompanying 2 D layer; the temperature dependence of these emissions is notably different. Strong red-shifts of both emissions as the CdSe coverage increases are observed.

Original languageEnglish
Pages (from-to)761-764
Number of pages4
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Monolayers
quantum dots
D region
Molecular beam epitaxy
Excitons
red shift
excitons
temperature dependence
Temperature
LDS 751

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe. / Kim, C. S.; Kim, M.; Lee, Sang Hoon; Furdyna, J. K.; Dobrowolska, M.; Rho, H.; Smith, L. M.; Jackson, Howard E.

In: Journal of Crystal Growth, Vol. 214, 02.06.2000, p. 761-764.

Research output: Contribution to journalArticle

Kim, CS, Kim, M, Lee, SH, Furdyna, JK, Dobrowolska, M, Rho, H, Smith, LM & Jackson, HE 2000, 'Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe', Journal of Crystal Growth, vol. 214, pp. 761-764. https://doi.org/10.1016/S0022-0248(00)00221-9
Kim, C. S. ; Kim, M. ; Lee, Sang Hoon ; Furdyna, J. K. ; Dobrowolska, M. ; Rho, H. ; Smith, L. M. ; Jackson, Howard E. / Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe. In: Journal of Crystal Growth. 2000 ; Vol. 214. pp. 761-764.
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