Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe

C. S. Kim, M. Kim, S. Lee, J. K. Furdyna, M. Dobrowolska, H. Rho, L. M. Smith, Howard E. Jackson

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

The evolution of CdSe quantum dot (QD) formation on ZnSe was investigated on a series of samples grown by MBE, with nominal CdSe coverages ranging from 1.1 to 2.6 monolayers (ML). Micro-PL data suggest strongly confined zero-dimensional excitons even for coverages as low as 1.1 ML. PL and micro-PL data show emission from the QDs as well as from an accompanying 2 D layer; the temperature dependence of these emissions is notably different. Strong red-shifts of both emissions as the CdSe coverage increases are observed.

Original languageEnglish
Pages (from-to)761-764
Number of pages4
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Kim, C. S., Kim, M., Lee, S., Furdyna, J. K., Dobrowolska, M., Rho, H., Smith, L. M., & Jackson, H. E. (2000). Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe. Journal of Crystal Growth, 214, 761-764. https://doi.org/10.1016/S0022-0248(00)00221-9