Optical properties and morphology of GaN grown by MBE on sapphire substrates

E. Tuncel, D. B. Oberman, Heon Lee, T. Ueda, J. S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A series of GaN films grown by MBE on sapphire substrates with different nitrogen sources are characterized by optical transmission, spectroscopic ellipsometry (SE), photoluminescence (PL) and cross-sectional atomic force microscopy (AFM). The film thicknesses determined from broad spectral range transmission measurements and the AFM images are used in the analysis of the SE spectra. Interface roughnesses between the constituent layers, such as the substrate, the buffer and GaN layers are included in the modelling of the SE spectra and are also imaged by cross-sectional AFM. An effective medium type model is used for the modelling of interface and surface roughnesses in the SE spectra. The optical constants of the films in the band edge spectral range are determined in such a way as to simultaneously satisfy the transmission and the ellipsometry data.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages681-686
Number of pages6
Volume423
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period96/4/896/4/12

Fingerprint

Spectroscopic ellipsometry
Aluminum Oxide
Molecular beam epitaxy
Sapphire
Optical properties
Atomic force microscopy
Substrates
Surface roughness
Optical constants
Ellipsometry
Light transmission
Film thickness
Photoluminescence
Buffers
Nitrogen

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tuncel, E., Oberman, D. B., Lee, H., Ueda, T., & Harris, J. S. (1996). Optical properties and morphology of GaN grown by MBE on sapphire substrates. In Materials Research Society Symposium - Proceedings (Vol. 423, pp. 681-686). Materials Research Society.

Optical properties and morphology of GaN grown by MBE on sapphire substrates. / Tuncel, E.; Oberman, D. B.; Lee, Heon; Ueda, T.; Harris, J. S.

Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. p. 681-686.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tuncel, E, Oberman, DB, Lee, H, Ueda, T & Harris, JS 1996, Optical properties and morphology of GaN grown by MBE on sapphire substrates. in Materials Research Society Symposium - Proceedings. vol. 423, Materials Research Society, pp. 681-686, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 96/4/8.
Tuncel E, Oberman DB, Lee H, Ueda T, Harris JS. Optical properties and morphology of GaN grown by MBE on sapphire substrates. In Materials Research Society Symposium - Proceedings. Vol. 423. Materials Research Society. 1996. p. 681-686
Tuncel, E. ; Oberman, D. B. ; Lee, Heon ; Ueda, T. ; Harris, J. S. / Optical properties and morphology of GaN grown by MBE on sapphire substrates. Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. pp. 681-686
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