Optical properties of europium-silicate thin films fabricated on different SiO x intermediate layer

Young Chul Shin, Eun Hong Kim, Shi Jong Leem, Tae Geun Kim, Cheol Koo Hahn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the effect of SiO x intermediate layers on the photoluminescence properties of europium-silicate thin films. Layer structures of Eu 2O 3/SiO x/Si (100) were deposited by using an rf-sputtering method and were annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of the SiO x layer: sputtering using a SiO 2 target (Ar gas at a rate of 50 sccm) and reactive sputtering using a Si target (Ar gas at a rate of 45 sccm with O 2 gas at a rate of 5 sccm). The photoluminescence peak at 430 nm was observed in the sample with a SiO x interlayer sputtered from a SiO 2 target. In comparison, a PL peak at 570 nm was observed in the sample where SiO x layer had been deposited by reactive sputtering from a Si target.

Original languageEnglish
Pages (from-to)1764-1768
Number of pages5
JournalJournal of the Korean Physical Society
Volume50
Issue number6
Publication statusPublished - 2007 Jun 1

Fingerprint

europium
silicates
sputtering
optical properties
thin films
gases
photoluminescence
interlayers
annealing

Keywords

  • Europium silicate
  • Photoluminescence
  • Rapid thermal annealing
  • Rf-sputtering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Optical properties of europium-silicate thin films fabricated on different SiO x intermediate layer. / Shin, Young Chul; Kim, Eun Hong; Leem, Shi Jong; Kim, Tae Geun; Hahn, Cheol Koo.

In: Journal of the Korean Physical Society, Vol. 50, No. 6, 01.06.2007, p. 1764-1768.

Research output: Contribution to journalArticle

Shin, Young Chul ; Kim, Eun Hong ; Leem, Shi Jong ; Kim, Tae Geun ; Hahn, Cheol Koo. / Optical properties of europium-silicate thin films fabricated on different SiO x intermediate layer. In: Journal of the Korean Physical Society. 2007 ; Vol. 50, No. 6. pp. 1764-1768.
@article{c5f75fe5b0a14a8882fafa7e6eb605e2,
title = "Optical properties of europium-silicate thin films fabricated on different SiO x intermediate layer",
abstract = "We report the effect of SiO x intermediate layers on the photoluminescence properties of europium-silicate thin films. Layer structures of Eu 2O 3/SiO x/Si (100) were deposited by using an rf-sputtering method and were annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of the SiO x layer: sputtering using a SiO 2 target (Ar gas at a rate of 50 sccm) and reactive sputtering using a Si target (Ar gas at a rate of 45 sccm with O 2 gas at a rate of 5 sccm). The photoluminescence peak at 430 nm was observed in the sample with a SiO x interlayer sputtered from a SiO 2 target. In comparison, a PL peak at 570 nm was observed in the sample where SiO x layer had been deposited by reactive sputtering from a Si target.",
keywords = "Europium silicate, Photoluminescence, Rapid thermal annealing, Rf-sputtering",
author = "Shin, {Young Chul} and Kim, {Eun Hong} and Leem, {Shi Jong} and Kim, {Tae Geun} and Hahn, {Cheol Koo}",
year = "2007",
month = "6",
day = "1",
language = "English",
volume = "50",
pages = "1764--1768",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "6",

}

TY - JOUR

T1 - Optical properties of europium-silicate thin films fabricated on different SiO x intermediate layer

AU - Shin, Young Chul

AU - Kim, Eun Hong

AU - Leem, Shi Jong

AU - Kim, Tae Geun

AU - Hahn, Cheol Koo

PY - 2007/6/1

Y1 - 2007/6/1

N2 - We report the effect of SiO x intermediate layers on the photoluminescence properties of europium-silicate thin films. Layer structures of Eu 2O 3/SiO x/Si (100) were deposited by using an rf-sputtering method and were annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of the SiO x layer: sputtering using a SiO 2 target (Ar gas at a rate of 50 sccm) and reactive sputtering using a Si target (Ar gas at a rate of 45 sccm with O 2 gas at a rate of 5 sccm). The photoluminescence peak at 430 nm was observed in the sample with a SiO x interlayer sputtered from a SiO 2 target. In comparison, a PL peak at 570 nm was observed in the sample where SiO x layer had been deposited by reactive sputtering from a Si target.

AB - We report the effect of SiO x intermediate layers on the photoluminescence properties of europium-silicate thin films. Layer structures of Eu 2O 3/SiO x/Si (100) were deposited by using an rf-sputtering method and were annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of the SiO x layer: sputtering using a SiO 2 target (Ar gas at a rate of 50 sccm) and reactive sputtering using a Si target (Ar gas at a rate of 45 sccm with O 2 gas at a rate of 5 sccm). The photoluminescence peak at 430 nm was observed in the sample with a SiO x interlayer sputtered from a SiO 2 target. In comparison, a PL peak at 570 nm was observed in the sample where SiO x layer had been deposited by reactive sputtering from a Si target.

KW - Europium silicate

KW - Photoluminescence

KW - Rapid thermal annealing

KW - Rf-sputtering

UR - http://www.scopus.com/inward/record.url?scp=34547379357&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547379357&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:34547379357

VL - 50

SP - 1764

EP - 1768

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 6

ER -