Optical properties of europium-silicate thin films fabricated on different SiOx intermediate layer

Young Chul Shin, Eun Hong Kim, Shi Jong Leem, Tae Geun Kim, Cheol Koo Hahn

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We report the effect of SiOx intermediate layers on the photoluminescence properties of europium-silicate thin films. Layer structures of Eu2O3/SiOx/Si (100) were deposited by using an rf-sputtering method and were annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of the SiOx layer: sputtering using a SiO2 target (Ar gas at a rate of 50 sccm) and reactive sputtering using a Si target (Ar gas at a rate of 45 sccm with O2 gas at a rate of 5 sccm). The photoluminescence peak at 430 nm was observed in the sample with a SiOx interlayer sputtered from a SiO2 target. In comparison, a PL peak at 570 nm was observed in the sample where SiOx layer had been deposited by reactive sputtering from a Si target.

Original languageEnglish
Pages (from-to)1764-1768
Number of pages5
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2007 Jun



  • Europium silicate
  • Photoluminescence
  • Rapid thermal annealing
  • Rf-sputtering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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