Abstract
We have performed photoluminescence (PL) experiments on CdSe and CdZnSe self-assembled quantum dot (QD) systems in single- and double-layer geometries. The QDs were formed by using molecular beam epitaxy to deposit three monolayers (ML) of either CdSe or CdZnSe. The ZnSe barrier thickness separating the QD layers in the double layer geometry was 20 monolayers (MLs). Strong photoluminescence (PL) peaks were observed for CdSe and CdZnSe QDs in both single- and double-layer QD systems. The intensities of the PL peaks from the QDs exhibited a systematic decrease with increasing temperature. The temperature dependence of the integrated PL revealed that the activation energy of CdSe QDs for PL quenching was significantly different between the two geometries. The observed difference in the activation energies of the CdSe QDs was discussed based on the effective carrier delocalization via neighboring higher-energy CdZnSe QDs in the double-layer QD system.
| Original language | English |
|---|---|
| Pages (from-to) | 2816-2820 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 53 |
| Issue number | 5 PART 2 |
| Publication status | Published - 2008 Nov 1 |
Fingerprint
Keywords
- Activation energy
- Photoluminescence
- Quantum dots
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Optical properties of self-assembled quantum dots in single and double-layer configurations. / Kim, H. C.; Lee, Sang Hoon; Cho, Y. J.; Dobrowolska, M.; Furdyna, J. K.
In: Journal of the Korean Physical Society, Vol. 53, No. 5 PART 2, 01.11.2008, p. 2816-2820.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical properties of self-assembled quantum dots in single and double-layer configurations
AU - Kim, H. C.
AU - Lee, Sang Hoon
AU - Cho, Y. J.
AU - Dobrowolska, M.
AU - Furdyna, J. K.
PY - 2008/11/1
Y1 - 2008/11/1
N2 - We have performed photoluminescence (PL) experiments on CdSe and CdZnSe self-assembled quantum dot (QD) systems in single- and double-layer geometries. The QDs were formed by using molecular beam epitaxy to deposit three monolayers (ML) of either CdSe or CdZnSe. The ZnSe barrier thickness separating the QD layers in the double layer geometry was 20 monolayers (MLs). Strong photoluminescence (PL) peaks were observed for CdSe and CdZnSe QDs in both single- and double-layer QD systems. The intensities of the PL peaks from the QDs exhibited a systematic decrease with increasing temperature. The temperature dependence of the integrated PL revealed that the activation energy of CdSe QDs for PL quenching was significantly different between the two geometries. The observed difference in the activation energies of the CdSe QDs was discussed based on the effective carrier delocalization via neighboring higher-energy CdZnSe QDs in the double-layer QD system.
AB - We have performed photoluminescence (PL) experiments on CdSe and CdZnSe self-assembled quantum dot (QD) systems in single- and double-layer geometries. The QDs were formed by using molecular beam epitaxy to deposit three monolayers (ML) of either CdSe or CdZnSe. The ZnSe barrier thickness separating the QD layers in the double layer geometry was 20 monolayers (MLs). Strong photoluminescence (PL) peaks were observed for CdSe and CdZnSe QDs in both single- and double-layer QD systems. The intensities of the PL peaks from the QDs exhibited a systematic decrease with increasing temperature. The temperature dependence of the integrated PL revealed that the activation energy of CdSe QDs for PL quenching was significantly different between the two geometries. The observed difference in the activation energies of the CdSe QDs was discussed based on the effective carrier delocalization via neighboring higher-energy CdZnSe QDs in the double-layer QD system.
KW - Activation energy
KW - Photoluminescence
KW - Quantum dots
UR - http://www.scopus.com/inward/record.url?scp=57349178938&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57349178938&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:57349178938
VL - 53
SP - 2816
EP - 2820
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 5 PART 2
ER -