Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

Kang Ju Lee, Tae Dong Kang, Hosun Lee, Seung Hui Hong, Suk Ho Choi, Tae Yeon Seong, Kyung Joong Kim, Dae Won Moon

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.

Original languageEnglish
Pages (from-to)196-200
Number of pages5
JournalThin Solid Films
Volume476
Issue number1
DOIs
Publication statusPublished - 2005 Apr 1
Externally publishedYes

Fingerprint

Spectroscopic ellipsometry
ellipsometry
Multilayers
Optical properties
optical properties
Volume fraction
annealing
Annealing
stoichiometry
nanocrystals
sputtering
ion beams
Stoichiometry
Nanocrystals
Ion beams
Sputtering
transmission electron microscopy
temperature
estimates
Transmission electron microscopy

Keywords

  • Ellipsometry
  • Nanostructures
  • Silicon
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry. / Lee, Kang Ju; Kang, Tae Dong; Lee, Hosun; Hong, Seung Hui; Choi, Suk Ho; Seong, Tae Yeon; Kim, Kyung Joong; Moon, Dae Won.

In: Thin Solid Films, Vol. 476, No. 1, 01.04.2005, p. 196-200.

Research output: Contribution to journalArticle

Lee, Kang Ju ; Kang, Tae Dong ; Lee, Hosun ; Hong, Seung Hui ; Choi, Suk Ho ; Seong, Tae Yeon ; Kim, Kyung Joong ; Moon, Dae Won. / Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry. In: Thin Solid Films. 2005 ; Vol. 476, No. 1. pp. 196-200.
@article{b304f562c49645dfa388e09be6b2920e,
title = "Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry",
abstract = "Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.",
keywords = "Ellipsometry, Nanostructures, Silicon, Transmission electron microscopy",
author = "Lee, {Kang Ju} and Kang, {Tae Dong} and Hosun Lee and Hong, {Seung Hui} and Choi, {Suk Ho} and Seong, {Tae Yeon} and Kim, {Kyung Joong} and Moon, {Dae Won}",
year = "2005",
month = "4",
day = "1",
doi = "10.1016/j.tsf.2004.09.037",
language = "English",
volume = "476",
pages = "196--200",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

AU - Lee, Kang Ju

AU - Kang, Tae Dong

AU - Lee, Hosun

AU - Hong, Seung Hui

AU - Choi, Suk Ho

AU - Seong, Tae Yeon

AU - Kim, Kyung Joong

AU - Moon, Dae Won

PY - 2005/4/1

Y1 - 2005/4/1

N2 - Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.

AB - Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.

KW - Ellipsometry

KW - Nanostructures

KW - Silicon

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=13844256780&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13844256780&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.09.037

DO - 10.1016/j.tsf.2004.09.037

M3 - Article

VL - 476

SP - 196

EP - 200

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -