Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

Kang Ju Lee, Tae Dong Kang, Hosun Lee, Seung Hui Hong, Suk Ho Choi, Tae Yeon Seong, Kyung Joong Kim, Dae Won Moon

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15 Citations (Scopus)

Abstract

Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.

Original languageEnglish
Pages (from-to)196-200
Number of pages5
JournalThin Solid Films
Volume476
Issue number1
DOIs
Publication statusPublished - 2005 Apr 1
Externally publishedYes

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Keywords

  • Ellipsometry
  • Nanostructures
  • Silicon
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Lee, K. J., Kang, T. D., Lee, H., Hong, S. H., Choi, S. H., Seong, T. Y., Kim, K. J., & Moon, D. W. (2005). Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry. Thin Solid Films, 476(1), 196-200. https://doi.org/10.1016/j.tsf.2004.09.037