Optical signature of the electron injection in Ga2O3

Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Shihyun Ahn, Fan Ren, Lin Yuna, Stephen J. Pearton, Ji Hyun Kim, Boris Meyler, Joseph Salzman

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted β-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material.

Original languageEnglish
Pages (from-to)Q3049-Q3051
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number2
DOIs
Publication statusPublished - 2017

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Lee, J., Flitsiyan, E., Chernyak, L., Ahn, S., Ren, F., Yuna, L., Pearton, S. J., Kim, J. H., Meyler, B., & Salzman, J. (2017). Optical signature of the electron injection in Ga2O3 ECS Journal of Solid State Science and Technology, 6(2), Q3049-Q3051. https://doi.org/10.1149/2.0101702jss