Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted β-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials