Abstract
We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.
| Original language | English |
|---|---|
| Pages (from-to) | 1021-1023 |
| Number of pages | 3 |
| Journal | Semiconductors |
| Volume | 33 |
| Issue number | 9 |
| Publication status | Published - 1999 Sep 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Optical spectra of wide band gap BexZn1 - xSe alloys. / Mintairov, A. M.; Raymond, S.; Merz, J. L.; Peiris, F. C.; Lee, Sang Hoon; Bindley, U.; Furdyna, J. K.; Melehin, V. G.; Sadchikov, K.
In: Semiconductors, Vol. 33, No. 9, 01.09.1999, p. 1021-1023.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical spectra of wide band gap BexZn1 - xSe alloys
AU - Mintairov, A. M.
AU - Raymond, S.
AU - Merz, J. L.
AU - Peiris, F. C.
AU - Lee, Sang Hoon
AU - Bindley, U.
AU - Furdyna, J. K.
AU - Melehin, V. G.
AU - Sadchikov, K.
PY - 1999/9/1
Y1 - 1999/9/1
N2 - We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.
AB - We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.
UR - http://www.scopus.com/inward/record.url?scp=0033196064&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033196064&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033196064
VL - 33
SP - 1021
EP - 1023
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 9
ER -