Optical spectra of wide band gap BexZn1 - xSe alloys

A. M. Mintairov; S. Raymond; J. L. Merz; F. C. Peiris; S. Lee; U. Bindley; J. K. Furdyna; V. G. Melehin; K. Sadchikov

doi:10.1134/1.1187830

Optical spectra of wide band gap Be_xZn_{1 - x}Se alloys

A. M. Mintairov, S. Raymond, J. L. Merz, F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna, V. G. Melehin, K. Sadchikov

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of Be_xZn_1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. Be_xZn_1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the Be_xZn_1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.

Original language	English
Pages (from-to)	1021-1023
Number of pages	3
Journal	Semiconductors
Volume	33
Issue number	9
DOIs	https://doi.org/10.1134/1.1187830
Publication status	Published - 1999 Sep
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Optical spectra of wide band gap BexZn1 - xSe alloys",

abstract = "We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.",

author = "Mintairov, {A. M.} and S. Raymond and Merz, {J. L.} and Peiris, {F. C.} and S. Lee and U. Bindley and Furdyna, {J. K.} and Melehin, {V. G.} and K. Sadchikov",

year = "1999",

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T1 - Optical spectra of wide band gap BexZn1 - xSe alloys

AU - Mintairov, A. M.

AU - Raymond, S.

AU - Merz, J. L.

AU - Peiris, F. C.

AU - Lee, S.

AU - Bindley, U.

AU - Furdyna, J. K.

AU - Melehin, V. G.

AU - Sadchikov, K.

PY - 1999/9

Y1 - 1999/9

N2 - We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.

AB - We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.

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