Optical spectra of wide band gap BexZn1 - xSe alloys

A. M. Mintairov, S. Raymond, J. L. Merz, F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna, V. G. Melehin, K. Sadchikov

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.

Original languageEnglish
Pages (from-to)1021-1023
Number of pages3
JournalSemiconductors
Volume33
Issue number9
DOIs
Publication statusPublished - 1999 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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    Mintairov, A. M., Raymond, S., Merz, J. L., Peiris, F. C., Lee, S., Bindley, U., Furdyna, J. K., Melehin, V. G., & Sadchikov, K. (1999). Optical spectra of wide band gap BexZn1 - xSe alloys. Semiconductors, 33(9), 1021-1023. https://doi.org/10.1134/1.1187830