Optical spectra of wide band gap BexZn1 - xSe alloys

A. M. Mintairov, S. Raymond, J. L. Merz, F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna, V. G. Melehin, K. Sadchikov

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1-xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1-xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1-xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x =0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.

Original languageEnglish
Pages (from-to)1021-1023
Number of pages3
JournalSemiconductors
Volume33
Issue number9
DOIs
Publication statusPublished - 1999 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Optical spectra of wide band gap Be<sub>x</sub>Zn<sub>1 - x</sub>Se alloys'. Together they form a unique fingerprint.

Cite this