Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers

I. A. Buyanova, J. P. Bergman, W. M. Chen, G. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, Ji Hyun Kim, F. Ren, F. V. Kyrychenko, C. J. Stanton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.

Original languageEnglish
Pages (from-to)2668-2672
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number6
DOIs
Publication statusPublished - 2004 Nov 1
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Light emitting diodes
quantum wells
injection
Photoluminescence
light emitting diodes
Hamiltonians
Spin polarization
Conduction bands
Molecular beam epitaxy
Relaxation time
Spectroscopy
Wavelength
photoluminescence
injectors
confining
wurtzite
conduction bands
molecular beam epitaxy
relaxation time

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers. / Buyanova, I. A.; Bergman, J. P.; Chen, W. M.; Thaler, G.; Frazier, R.; Abernathy, C. R.; Pearton, S. J.; Kim, Ji Hyun; Ren, F.; Kyrychenko, F. V.; Stanton, C. J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.; Zavada, J. M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 6, 01.11.2004, p. 2668-2672.

Research output: Contribution to journalArticle

Buyanova, IA, Bergman, JP, Chen, WM, Thaler, G, Frazier, R, Abernathy, CR, Pearton, SJ, Kim, JH, Ren, F, Kyrychenko, FV, Stanton, CJ, Pan, CC, Chen, GT, Chyi, JI & Zavada, JM 2004, 'Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 6, pp. 2668-2672. https://doi.org/10.1116/1.1819897
Buyanova, I. A. ; Bergman, J. P. ; Chen, W. M. ; Thaler, G. ; Frazier, R. ; Abernathy, C. R. ; Pearton, S. J. ; Kim, Ji Hyun ; Ren, F. ; Kyrychenko, F. V. ; Stanton, C. J. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. ; Zavada, J. M. / Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 ; Vol. 22, No. 6. pp. 2668-2672.
@article{dd51758dfb5f436ab16f9674cf28d4b0,
title = "Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers",
abstract = "The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.",
author = "Buyanova, {I. A.} and Bergman, {J. P.} and Chen, {W. M.} and G. Thaler and R. Frazier and Abernathy, {C. R.} and Pearton, {S. J.} and Kim, {Ji Hyun} and F. Ren and Kyrychenko, {F. V.} and Stanton, {C. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Zavada, {J. M.}",
year = "2004",
month = "11",
day = "1",
doi = "10.1116/1.1819897",
language = "English",
volume = "22",
pages = "2668--2672",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers

AU - Buyanova, I. A.

AU - Bergman, J. P.

AU - Chen, W. M.

AU - Thaler, G.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Kyrychenko, F. V.

AU - Stanton, C. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Zavada, J. M.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.

AB - The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.

UR - http://www.scopus.com/inward/record.url?scp=19944433554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944433554&partnerID=8YFLogxK

U2 - 10.1116/1.1819897

DO - 10.1116/1.1819897

M3 - Article

VL - 22

SP - 2668

EP - 2672

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -