Optically tunable feedback operation of silicon nanowire transistors

Doohyeok Lim, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this study, we present an optically tunable feedback field-effect transistor (FBFET) with two independent gates and a p + -i-n + silicon nanowire. Because of the feedback operation, the FBFET features extremely steep switching characteristics with subthreshold swings <4 mV dec-1, and it can be reconfigured as a p- or n-type transistor by controlling the gate-voltage biases. When the FBFET is exposed to a He-Ne laser beam (λ = 633 nm), photogenerated carriers accumulate in the potential wells and reduce the potential-barrier height. The optically tunable feedback operation is attributed to the lowering of the potential barrier caused by the light. The triggering voltages can be modulated according to illumination, even when feedback is being provided. This optically tunable transistor with excellent switching characteristics opens up possibilities for application in future optoelectronic devices.

Original languageEnglish
Article number115014
JournalSemiconductor Science and Technology
Volume34
Issue number11
DOIs
Publication statusPublished - 2019 Oct 9

Keywords

  • field-effect transistor
  • illumination
  • positive feedback loop
  • silicon nanowire
  • subthreshold swing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Optically tunable feedback operation of silicon nanowire transistors. / Lim, Doohyeok; Kim, Sangsig.

In: Semiconductor Science and Technology, Vol. 34, No. 11, 115014, 09.10.2019.

Research output: Contribution to journalArticle

@article{3c8488c2ca80417da20eb69e65bae73b,
title = "Optically tunable feedback operation of silicon nanowire transistors",
abstract = "In this study, we present an optically tunable feedback field-effect transistor (FBFET) with two independent gates and a p + -i-n + silicon nanowire. Because of the feedback operation, the FBFET features extremely steep switching characteristics with subthreshold swings <4 mV dec-1, and it can be reconfigured as a p- or n-type transistor by controlling the gate-voltage biases. When the FBFET is exposed to a He-Ne laser beam (λ = 633 nm), photogenerated carriers accumulate in the potential wells and reduce the potential-barrier height. The optically tunable feedback operation is attributed to the lowering of the potential barrier caused by the light. The triggering voltages can be modulated according to illumination, even when feedback is being provided. This optically tunable transistor with excellent switching characteristics opens up possibilities for application in future optoelectronic devices.",
keywords = "field-effect transistor, illumination, positive feedback loop, silicon nanowire, subthreshold swing",
author = "Doohyeok Lim and Sangsig Kim",
year = "2019",
month = "10",
day = "9",
doi = "10.1088/1361-6641/ab3586",
language = "English",
volume = "34",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "11",

}

TY - JOUR

T1 - Optically tunable feedback operation of silicon nanowire transistors

AU - Lim, Doohyeok

AU - Kim, Sangsig

PY - 2019/10/9

Y1 - 2019/10/9

N2 - In this study, we present an optically tunable feedback field-effect transistor (FBFET) with two independent gates and a p + -i-n + silicon nanowire. Because of the feedback operation, the FBFET features extremely steep switching characteristics with subthreshold swings <4 mV dec-1, and it can be reconfigured as a p- or n-type transistor by controlling the gate-voltage biases. When the FBFET is exposed to a He-Ne laser beam (λ = 633 nm), photogenerated carriers accumulate in the potential wells and reduce the potential-barrier height. The optically tunable feedback operation is attributed to the lowering of the potential barrier caused by the light. The triggering voltages can be modulated according to illumination, even when feedback is being provided. This optically tunable transistor with excellent switching characteristics opens up possibilities for application in future optoelectronic devices.

AB - In this study, we present an optically tunable feedback field-effect transistor (FBFET) with two independent gates and a p + -i-n + silicon nanowire. Because of the feedback operation, the FBFET features extremely steep switching characteristics with subthreshold swings <4 mV dec-1, and it can be reconfigured as a p- or n-type transistor by controlling the gate-voltage biases. When the FBFET is exposed to a He-Ne laser beam (λ = 633 nm), photogenerated carriers accumulate in the potential wells and reduce the potential-barrier height. The optically tunable feedback operation is attributed to the lowering of the potential barrier caused by the light. The triggering voltages can be modulated according to illumination, even when feedback is being provided. This optically tunable transistor with excellent switching characteristics opens up possibilities for application in future optoelectronic devices.

KW - field-effect transistor

KW - illumination

KW - positive feedback loop

KW - silicon nanowire

KW - subthreshold swing

UR - http://www.scopus.com/inward/record.url?scp=85075801155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075801155&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/ab3586

DO - 10.1088/1361-6641/ab3586

M3 - Article

AN - SCOPUS:85075801155

VL - 34

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 115014

ER -