Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses

Young Chul Shin, Dong Hoon Kang, Bum Jun Kim, Chang Yun Lee, Byung Jin Ma, Joon Seok Kang, Sang Bum Lee, Young Min Kim, Soohaeng Cho, Yong Jo Park, M. D. Kim, Shi Jong Leem, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.

Original languageEnglish
Pages (from-to)866-870
Number of pages5
JournalJournal of the Korean Physical Society
Volume50
Issue number3
Publication statusPublished - 2007 Mar 1

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semiconductor lasers
optimization
spectroscopy
lasers
threshold currents
ridges
divergence
slopes
waveguides
temperature
defects

Keywords

  • AlGaInP
  • Deep-level defects
  • DLTS
  • High power
  • High temperature
  • Semiconductor lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses. / Shin, Young Chul; Kang, Dong Hoon; Kim, Bum Jun; Lee, Chang Yun; Ma, Byung Jin; Kang, Joon Seok; Lee, Sang Bum; Kim, Young Min; Cho, Soohaeng; Park, Yong Jo; Kim, M. D.; Leem, Shi Jong; Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 50, No. 3, 01.03.2007, p. 866-870.

Research output: Contribution to journalArticle

Shin, YC, Kang, DH, Kim, BJ, Lee, CY, Ma, BJ, Kang, JS, Lee, SB, Kim, YM, Cho, S, Park, YJ, Kim, MD, Leem, SJ & Kim, TG 2007, 'Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses', Journal of the Korean Physical Society, vol. 50, no. 3, pp. 866-870.
Shin, Young Chul ; Kang, Dong Hoon ; Kim, Bum Jun ; Lee, Chang Yun ; Ma, Byung Jin ; Kang, Joon Seok ; Lee, Sang Bum ; Kim, Young Min ; Cho, Soohaeng ; Park, Yong Jo ; Kim, M. D. ; Leem, Shi Jong ; Kim, Tae Geun. / Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses. In: Journal of the Korean Physical Society. 2007 ; Vol. 50, No. 3. pp. 866-870.
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abstract = "We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.",
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AU - Shin, Young Chul

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AU - Kim, Bum Jun

AU - Lee, Chang Yun

AU - Ma, Byung Jin

AU - Kang, Joon Seok

AU - Lee, Sang Bum

AU - Kim, Young Min

AU - Cho, Soohaeng

AU - Park, Yong Jo

AU - Kim, M. D.

AU - Leem, Shi Jong

AU - Kim, Tae Geun

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AB - We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.

KW - AlGaInP

KW - Deep-level defects

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KW - Semiconductor lasers

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