Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses

Young Chul Shin, Dong Hoon Kang, Bum Jun Kim, Chang Yun Lee, Byung Jin Ma, Joon Seok Kang, Sang Bum Lee, Young Min Kim, Soohaeng Cho, Yong Jo Park, M. D. Kim, Shi Jong Leem, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.

Original languageEnglish
Pages (from-to)866-870
Number of pages5
JournalJournal of the Korean Physical Society
Volume50
Issue number3
DOIs
Publication statusPublished - 2007 Mar

Keywords

  • AlGaInP
  • DLTS
  • Deep-level defects
  • High power
  • High temperature
  • Semiconductor lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Shin, Y. C., Kang, D. H., Kim, B. J., Lee, C. Y., Ma, B. J., Kang, J. S., Lee, S. B., Kim, Y. M., Cho, S., Park, Y. J., Kim, M. D., Leem, S. J., & Kim, T. G. (2007). Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses. Journal of the Korean Physical Society, 50(3), 866-870. https://doi.org/10.3938/jkps.50.866