In this paper, we optimize and investigate Ge n+/p and p +/n junction diodes formed by Co metal-induced dopant activation technique at the activation temperature range between 300 °C and 420 °C in terms of on/ off-current ratio. Combining this low-temperature n +/p and p+/n junction formation technique with a low-temperature gate stack comprised of Al/Al2O3/GeO 2 by ozone oxidation technique, we demonstrate n- and p-channel Ge metal-oxide-semiconductor field-effect transistors (MOSFETs), respectively, at sub-360 °C and 380 °C. This low-temperature Ge MOSFET process can be utilized to integrate Ge complementary metal-oxide-semiconductor devices above interconnect layers for monolithic 3-D integrated circuits.
- Germanium (Ge) junction diode
- metal-induced crystallization (MIC)
- metal-induced dopants activation (MIDA)
- monolithic 3-D integrated circuit (3-D-IC)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering