Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

Shi Jong Leem, Young Chul Shin, Eun Hong Kim, Chul Min Kim, Byoung Gyu Lee, Youngboo Moon, In Hwan Lee, Tae Geun Kim

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We report the effect of different temperature profiles on the quality of the InGaN/GaN multiple quantum well (MQW) structures by employing photoluminescence (PL) and atomic force microscopy (AFM). We adopted a two-step varied-barrier-growth temperature method to improve the structural and optical properties of the InGaN/GaN MQW layers. The low-temperature GaN barrier layer was introduced to reduce the desorption rate of the indium atoms of the InGaN well, and then the high-temperature GaN barrier was grown to reduce the defects of InGaN/GaN MQWs. When the width of the low-temperature GaN barrier was 50 and the high-temperature GaN barrier was grown at 1000 °C, the defect and surface roughness were significantly reduced, especially with a reduction in the depth of V-defect as low as 20 .

Original languageEnglish
Article number125039
JournalSemiconductor Science and Technology
Volume23
Issue number12
DOIs
Publication statusPublished - 2008 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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