Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

Shi Jong Leem, Young Chul Shin, Eun Hong Kim, Chul Min Kim, Byoung Gyu Lee, Youngboo Moon, In-Hwan Lee, Tae Geun Kim

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We report the effect of different temperature profiles on the quality of the InGaN/GaN multiple quantum well (MQW) structures by employing photoluminescence (PL) and atomic force microscopy (AFM). We adopted a two-step varied-barrier-growth temperature method to improve the structural and optical properties of the InGaN/GaN MQW layers. The low-temperature GaN barrier layer was introduced to reduce the desorption rate of the indium atoms of the InGaN well, and then the high-temperature GaN barrier was grown to reduce the defects of InGaN/GaN MQWs. When the width of the low-temperature GaN barrier was 50 and the high-temperature GaN barrier was grown at 1000 °C, the defect and surface roughness were significantly reduced, especially with a reduction in the depth of V-defect as low as 20 .

Original languageEnglish
Article number125039
JournalSemiconductor Science and Technology
Volume23
Issue number12
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Growth temperature
Semiconductor quantum wells
quantum wells
optimization
defects
Defects
Temperature
temperature
barrier layers
Indium
temperature profiles
indium
surface roughness
roughness
desorption
atomic force microscopy
Structural properties
Atomic force microscopy
Desorption
Photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method. / Leem, Shi Jong; Shin, Young Chul; Kim, Eun Hong; Kim, Chul Min; Lee, Byoung Gyu; Moon, Youngboo; Lee, In-Hwan; Kim, Tae Geun.

In: Semiconductor Science and Technology, Vol. 23, No. 12, 125039, 01.12.2008.

Research output: Contribution to journalArticle

Leem, Shi Jong ; Shin, Young Chul ; Kim, Eun Hong ; Kim, Chul Min ; Lee, Byoung Gyu ; Moon, Youngboo ; Lee, In-Hwan ; Kim, Tae Geun. / Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method. In: Semiconductor Science and Technology. 2008 ; Vol. 23, No. 12.
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