Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Jun Ho Kim, Hankyeol Lee, Jin Young Na, Sun Kyung Kim, Young Zo Yoo, Tae Yeon Seong

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.

Original languageEnglish
Pages (from-to)452-455
Number of pages4
JournalCurrent Applied Physics
Volume15
Issue number4
DOIs
Publication statusPublished - 2015

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Keywords

  • Indium gallium zinc oxide Ag Multilayer Transparent conducting electrode

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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