Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Jun Ho Kim, Hankyeol Lee, Jin Young Na, Sun Kyung Kim, Young Zo Yoo, Tae Yeon Seong

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.

Original languageEnglish
Pages (from-to)452-455
Number of pages4
JournalCurrent Applied Physics
Volume15
Issue number4
DOIs
Publication statusPublished - 2015

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Zinc oxide
zinc oxides
indium
transmittance
Multilayers
Electrodes
optimization
electrodes
Multilayer films
Sheet resistance
Opacity
Carrier concentration
Electric properties
Optical properties
Surface roughness
roughness

Keywords

  • Indium gallium zinc oxide Ag Multilayer Transparent conducting electrode

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices. / Kim, Jun Ho; Lee, Hankyeol; Na, Jin Young; Kim, Sun Kyung; Yoo, Young Zo; Seong, Tae Yeon.

In: Current Applied Physics, Vol. 15, No. 4, 2015, p. 452-455.

Research output: Contribution to journalArticle

@article{28e0cc64608341a88f6466d8bad1fafc,
title = "Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices",
abstract = "We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7{\%} at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.",
keywords = "Indium gallium zinc oxide Ag Multilayer Transparent conducting electrode",
author = "Kim, {Jun Ho} and Hankyeol Lee and Na, {Jin Young} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Seong, {Tae Yeon}",
year = "2015",
doi = "10.1016/j.cap.2015.02.003",
language = "English",
volume = "15",
pages = "452--455",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

AU - Kim, Jun Ho

AU - Lee, Hankyeol

AU - Na, Jin Young

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Seong, Tae Yeon

PY - 2015

Y1 - 2015

N2 - We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.

AB - We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.

KW - Indium gallium zinc oxide Ag Multilayer Transparent conducting electrode

UR - http://www.scopus.com/inward/record.url?scp=84922454189&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84922454189&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2015.02.003

DO - 10.1016/j.cap.2015.02.003

M3 - Article

VL - 15

SP - 452

EP - 455

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 4

ER -