Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

Jaecheon Han, Daehee Lee, Boram Jin, Hwanhee Jeong, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The effects of the n-contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000×1000 μm2) and large (1450×1450 μm2) VLEDs, the forward bias voltages are decreased from 3.22 to 3.12 V at 350 mA and from 3.44 to 3.16 V at 700 mA, respectively, as the number of n-contact via holes is increased. The small LEDs give maximum output powers of 651.0-675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7-1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1-57.2 °C at 350 mA, while the large chips show the junction temperatures of 83.1-93.0 °C at 700 mA, The small LED chips exhibit lower junction temperatures when equipped with more n-contact via holes.

Original languageEnglish
Pages (from-to)153-159
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume31
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Gallium nitride
Indium
gallium nitrides
Light emitting diodes
indium
light emitting diodes
chips
Thin films
thin films
Bias voltage
output
Temperature
plugs
gallium nitride
illuminating
Lighting
temperature
Degradation
degradation
solid state

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode. / Han, Jaecheon; Lee, Daehee; Jin, Boram; Jeong, Hwanhee; Song, June O.; Seong, Tae Yeon.

In: Materials Science in Semiconductor Processing, Vol. 31, 01.01.2015, p. 153-159.

Research output: Contribution to journalArticle

@article{c24f53a1117c43dd992d8e791ec8a77f,
title = "Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode",
abstract = "The effects of the n-contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000×1000 μm2) and large (1450×1450 μm2) VLEDs, the forward bias voltages are decreased from 3.22 to 3.12 V at 350 mA and from 3.44 to 3.16 V at 700 mA, respectively, as the number of n-contact via holes is increased. The small LEDs give maximum output powers of 651.0-675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7-1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1-57.2 °C at 350 mA, while the large chips show the junction temperatures of 83.1-93.0 °C at 700 mA, The small LED chips exhibit lower junction temperatures when equipped with more n-contact via holes.",
keywords = "GaN, Ohmic contact, Vertical LED, Via hole",
author = "Jaecheon Han and Daehee Lee and Boram Jin and Hwanhee Jeong and Song, {June O.} and Seong, {Tae Yeon}",
year = "2015",
month = "1",
day = "1",
doi = "10.1016/j.mssp.2014.11.038",
language = "English",
volume = "31",
pages = "153--159",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

AU - Han, Jaecheon

AU - Lee, Daehee

AU - Jin, Boram

AU - Jeong, Hwanhee

AU - Song, June O.

AU - Seong, Tae Yeon

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The effects of the n-contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000×1000 μm2) and large (1450×1450 μm2) VLEDs, the forward bias voltages are decreased from 3.22 to 3.12 V at 350 mA and from 3.44 to 3.16 V at 700 mA, respectively, as the number of n-contact via holes is increased. The small LEDs give maximum output powers of 651.0-675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7-1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1-57.2 °C at 350 mA, while the large chips show the junction temperatures of 83.1-93.0 °C at 700 mA, The small LED chips exhibit lower junction temperatures when equipped with more n-contact via holes.

AB - The effects of the n-contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000×1000 μm2) and large (1450×1450 μm2) VLEDs, the forward bias voltages are decreased from 3.22 to 3.12 V at 350 mA and from 3.44 to 3.16 V at 700 mA, respectively, as the number of n-contact via holes is increased. The small LEDs give maximum output powers of 651.0-675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7-1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1-57.2 °C at 350 mA, while the large chips show the junction temperatures of 83.1-93.0 °C at 700 mA, The small LED chips exhibit lower junction temperatures when equipped with more n-contact via holes.

KW - GaN

KW - Ohmic contact

KW - Vertical LED

KW - Via hole

UR - http://www.scopus.com/inward/record.url?scp=84916887447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84916887447&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2014.11.038

DO - 10.1016/j.mssp.2014.11.038

M3 - Article

VL - 31

SP - 153

EP - 159

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -