TY - JOUR
T1 - Optoelectronic characteristics of close-packed HgTe nanoparticles in the infrared range
AU - Kim, Hyunsuk
AU - Cho, Kyoungah
AU - Park, Byungjun
AU - Kim, Jin Hyoung
AU - Lee, Jun Woo
AU - Kim, Sangsig
AU - Noh, Taeyong
AU - Jang, Eunjoo
PY - 2006/2
Y1 - 2006/2
N2 - Absorption, photoluminescence (PL), photoresponse, and I-V measurements were made for a close-packed HgTe nanoparticle film without organic capping materials to investigate its optoelectronic characteristics in the infrared (IR) range. In the absorption and PL spectra taken for the close-packed nanoparticle film, the wavelength of exciton peak was red-shifted, compared with 1-thioglycerol capped HgTe nanoparticles dispersed in solution. For the HgTe nanoparticle film, dark current was below several pA level, current was increased by about three orders of magnitude at a biased voltage of 3 V under the illumination, and photoresponse was very rapid compared with 1-thioglycerol capped HgTe nanoparticles. These optoelectronic characteristics illustrate that HgTe nanoparticles are one of promising materials for the photodetector in the IR range. Finally, the origin for the increase of photocurrent with increasing temperature observed in this study will be discussed.
AB - Absorption, photoluminescence (PL), photoresponse, and I-V measurements were made for a close-packed HgTe nanoparticle film without organic capping materials to investigate its optoelectronic characteristics in the infrared (IR) range. In the absorption and PL spectra taken for the close-packed nanoparticle film, the wavelength of exciton peak was red-shifted, compared with 1-thioglycerol capped HgTe nanoparticles dispersed in solution. For the HgTe nanoparticle film, dark current was below several pA level, current was increased by about three orders of magnitude at a biased voltage of 3 V under the illumination, and photoresponse was very rapid compared with 1-thioglycerol capped HgTe nanoparticles. These optoelectronic characteristics illustrate that HgTe nanoparticles are one of promising materials for the photodetector in the IR range. Finally, the origin for the increase of photocurrent with increasing temperature observed in this study will be discussed.
KW - A. HgTe nanoparticles
KW - B. Trap-mediated hopping process
KW - D. Photocurrent
KW - E. Photoluminesence
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U2 - 10.1016/j.ssc.2005.11.037
DO - 10.1016/j.ssc.2005.11.037
M3 - Article
AN - SCOPUS:31344445947
VL - 137
SP - 315
EP - 319
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 6
ER -