Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy

Bong Joong Kim, Young Woo Ok, Tae Yeon Seong, D. C. Chapman, G. B. Stringfellow

Research output: Contribution to journalArticlepeer-review

Abstract

Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP heterostructures grown on (001) GaAs singular and vicinal substrates to investigate nitrogen doping effect on the ordering and domain structures. TEM results show that well-defined order-disorder-order heterostructures are formed when nitrogen doping level is high. This indicates that nitrogen hinders the occurrence of ordering. For the singular samples, ordered domain structures are found to be dependent on the nitrogen doping level of the underlying layer, on which they are grown. The doping dependence of ordered structures and the formation of anti-phase boundaries are described based on surface undulations (i.e., hillocks) and step configuration.

Original languageEnglish
Pages (from-to)1092-1096
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume19
Issue number11
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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