Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy

Bong Joong Kim; Young Woo Ok; Tae Yeon Seong; D. C. Chapman; G. B. Stringfellow

doi:10.1007/s10854-007-9473-4

Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy

Bong Joong Kim, Young Woo Ok, Tae Yeon Seong, D. C. Chapman, G. B. Stringfellow

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP heterostructures grown on (001) GaAs singular and vicinal substrates to investigate nitrogen doping effect on the ordering and domain structures. TEM results show that well-defined order-disorder-order heterostructures are formed when nitrogen doping level is high. This indicates that nitrogen hinders the occurrence of ordering. For the singular samples, ordered domain structures are found to be dependent on the nitrogen doping level of the underlying layer, on which they are grown. The doping dependence of ordered structures and the formation of anti-phase boundaries are described based on surface undulations (i.e., hillocks) and step configuration.

Original language	English
Pages (from-to)	1092-1096
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	19
Issue number	11
DOIs	https://doi.org/10.1007/s10854-007-9473-4
Publication status	Published - 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-007-9473-4

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title = "Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy",

abstract = "Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP heterostructures grown on (001) GaAs singular and vicinal substrates to investigate nitrogen doping effect on the ordering and domain structures. TEM results show that well-defined order-disorder-order heterostructures are formed when nitrogen doping level is high. This indicates that nitrogen hinders the occurrence of ordering. For the singular samples, ordered domain structures are found to be dependent on the nitrogen doping level of the underlying layer, on which they are grown. The doping dependence of ordered structures and the formation of anti-phase boundaries are described based on surface undulations (i.e., hillocks) and step configuration.",

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AU - Kim, Bong Joong

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Chapman, D. C.

AU - Stringfellow, G. B.

PY - 2008

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N2 - Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP heterostructures grown on (001) GaAs singular and vicinal substrates to investigate nitrogen doping effect on the ordering and domain structures. TEM results show that well-defined order-disorder-order heterostructures are formed when nitrogen doping level is high. This indicates that nitrogen hinders the occurrence of ordering. For the singular samples, ordered domain structures are found to be dependent on the nitrogen doping level of the underlying layer, on which they are grown. The doping dependence of ordered structures and the formation of anti-phase boundaries are described based on surface undulations (i.e., hillocks) and step configuration.

AB - Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP heterostructures grown on (001) GaAs singular and vicinal substrates to investigate nitrogen doping effect on the ordering and domain structures. TEM results show that well-defined order-disorder-order heterostructures are formed when nitrogen doping level is high. This indicates that nitrogen hinders the occurrence of ordering. For the singular samples, ordered domain structures are found to be dependent on the nitrogen doping level of the underlying layer, on which they are grown. The doping dependence of ordered structures and the formation of anti-phase boundaries are described based on surface undulations (i.e., hillocks) and step configuration.

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Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy

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