Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy

Bong Joong Kim, Young Woo Ok, Tae Yeon Seong, D. C. Chapman, G. B. Stringfellow

Research output: Contribution to journalArticle

Abstract

Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP heterostructures grown on (001) GaAs singular and vicinal substrates to investigate nitrogen doping effect on the ordering and domain structures. TEM results show that well-defined order-disorder-order heterostructures are formed when nitrogen doping level is high. This indicates that nitrogen hinders the occurrence of ordering. For the singular samples, ordered domain structures are found to be dependent on the nitrogen doping level of the underlying layer, on which they are grown. The doping dependence of ordered structures and the formation of anti-phase boundaries are described based on surface undulations (i.e., hillocks) and step configuration.

Original languageEnglish
Pages (from-to)1092-1096
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume19
Issue number11
DOIs
Publication statusPublished - 2008 Jan 1

Fingerprint

Vapor phase epitaxy
Organometallics
vapor phase epitaxy
Nitrogen
Doping (additives)
nitrogen
Heterojunctions
Transmission electron microscopy
transmission electron microscopy
Order disorder transitions
antiphase boundaries
Phase boundaries
Atomic force microscopy
Vapors
atomic force microscopy
disorders
occurrences
vapor phases
Substrates
configurations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy. / Kim, Bong Joong; Ok, Young Woo; Seong, Tae Yeon; Chapman, D. C.; Stringfellow, G. B.

In: Journal of Materials Science: Materials in Electronics, Vol. 19, No. 11, 01.01.2008, p. 1092-1096.

Research output: Contribution to journalArticle

Kim, Bong Joong ; Ok, Young Woo ; Seong, Tae Yeon ; Chapman, D. C. ; Stringfellow, G. B. / Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy. In: Journal of Materials Science: Materials in Electronics. 2008 ; Vol. 19, No. 11. pp. 1092-1096.
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