Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy

Tae Yeon Seong, Do Geun Kim, Dong Hoon Jang, Jung Kee Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.

Original languageEnglish
Pages (from-to)5607-5611
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number11
Publication statusPublished - 1996 Nov 1

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Keywords

  • Doping, transmission electron microscope (TEM)
  • GaInAsP
  • GaInP
  • MOVPE
  • Ordering
  • Transmission electron diffraction (TED)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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