Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in  plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1996 Nov 1|
- Doping, transmission electron microscope (TEM)
- Transmission electron diffraction (TED)
ASJC Scopus subject areas
- Physics and Astronomy(all)