Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy

Tae Yeon Seong, Do Geun Kim, Dong Hoon Jang, Jung Kee Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.

Original languageEnglish
Pages (from-to)5607-5611
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number11
Publication statusPublished - 1996 Nov 1
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
vapor phase epitaxy
Zinc
zinc
Silicon
silicon
Electron diffraction
Electron microscopes
Doping (additives)
Atoms
antiphase boundaries
Substrates
Chemical analysis
electron diffraction
electron microscopes
atoms

Keywords

  • Doping, transmission electron microscope (TEM)
  • GaInAsP
  • GaInP
  • MOVPE
  • Ordering
  • Transmission electron diffraction (TED)

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

@article{c1fb2e6deec34c238e383f0bf0209ef2,
title = "Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy",
abstract = "Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.",
keywords = "Doping, transmission electron microscope (TEM), GaInAsP, GaInP, MOVPE, Ordering, Transmission electron diffraction (TED)",
author = "Seong, {Tae Yeon} and Kim, {Do Geun} and Jang, {Dong Hoon} and Lee, {Jung Kee}",
year = "1996",
month = "11",
day = "1",
language = "English",
volume = "35",
pages = "5607--5611",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11",

}

TY - JOUR

T1 - Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy

AU - Seong, Tae Yeon

AU - Kim, Do Geun

AU - Jang, Dong Hoon

AU - Lee, Jung Kee

PY - 1996/11/1

Y1 - 1996/11/1

N2 - Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.

AB - Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.

KW - Doping, transmission electron microscope (TEM)

KW - GaInAsP

KW - GaInP

KW - MOVPE

KW - Ordering

KW - Transmission electron diffraction (TED)

UR - http://www.scopus.com/inward/record.url?scp=0030288735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030288735&partnerID=8YFLogxK

M3 - Article

VL - 35

SP - 5607

EP - 5611

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

ER -