Ordering and Microstructures of GaN1-xAsx Layers Grown on (0001) GaN/Sapphire Substrates

Tae Yeon Seong, In Tae Bae, Chel Jong Choi, Y. Zhao, C. W. Tu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Transmission electron microscope and transmission electron diffraction examinations have been performed to investigate the ordering and microstructures of molecular beam epitaxial GaN1-xAsx layers grown on (0001) GaN/sapphire at temperatures between 500 and 730°C. We report the observation of ordering with a space group P3m1 in the GaNAs layer grown at 730°C. The GaNAs layers grown at temperatures below 600°C are polycrystalline, while the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc blende phase to a wurtzite phase, as the growth temperature increases from 500 to 730°C.

Original languageEnglish
Pages (from-to)94-96
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number2
Publication statusPublished - 1999 Feb 1
Externally publishedYes

Fingerprint

Aluminum Oxide
Sapphire
sapphire
microstructure
Microstructure
Molecular beams
Epitaxial layers
Growth temperature
Substrates
Electron diffraction
Zinc
Electron microscopes
Temperature
wurtzite
molecular beams
temperature
electron diffraction
zinc
electron microscopes
examination

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Ordering and Microstructures of GaN1-xAsx Layers Grown on (0001) GaN/Sapphire Substrates. / Seong, Tae Yeon; Bae, In Tae; Choi, Chel Jong; Zhao, Y.; Tu, C. W.

In: Electrochemical and Solid-State Letters, Vol. 2, No. 2, 01.02.1999, p. 94-96.

Research output: Contribution to journalArticle

Seong, Tae Yeon ; Bae, In Tae ; Choi, Chel Jong ; Zhao, Y. ; Tu, C. W. / Ordering and Microstructures of GaN1-xAsx Layers Grown on (0001) GaN/Sapphire Substrates. In: Electrochemical and Solid-State Letters. 1999 ; Vol. 2, No. 2. pp. 94-96.
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