Organic devices based on pentacene and perylene by the neutral cluster beam deposition method

Jeong Do Oh, Eun Sol Shin, Dae Kyu Kim, Jong-Ho Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, on the basis of p-type pentacene and n-type N,N′-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide (PTCDI-C8) organic field-effect transistors (OFETs) and two-input complementary NAND logic gates in the top-contact device configuration were produced and characterized. The organic active layers were deposited on hydroxyl-free polymethylmethacrylate (PMMA)-modified indium tin oxide (ITO) glass gate substrates by the neutral cluster beam deposition (NCBD) method. The morphological and structural properties of the organic semiconducting active layers on the PMMA substrates were examined using atomic force microscopy, X-ray diffraction and contact-angle goniometry. Based on the growth of high-quality, well-packed crystalline films on the PMMA dielectric-modified ITO gate substrates, the p- and n-type transistors exhibited hole and electron mobilities of 0.247 and 7.23 × 10−2 cm2/Vs, respectively, in the air without encapsulation. The trap density and activation energy were also derived from the transport characteristics for the temperature dependence of the mobilities in the temperature range 20 − 300 K for the first time. Because of the well balanced p- and n-type OFETs in the devices, the complementary metal-oxide semiconductor (CMOS) NAND logic circuits exhibited a high voltage gain and a large noise margin with slight hysteresis.

Original languageEnglish
Pages (from-to)421-427
Number of pages7
JournalSynthetic Metals
Volume220
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

Perylene
Polymethyl Methacrylate
Organic field effect transistors
indium oxides
NAND circuits
tin oxides
Substrates
field effect transistors
ITO glass
logic circuits
Hole mobility
Logic gates
Electron mobility
hole mobility
Tin oxides
electron mobility
Encapsulation
Hydroxyl Radical
Indium
Contact angle

Keywords

  • CMOS NAND logic gate
  • Neutral cluster beam deposition (NCBD) method
  • Organic field-effect transistor (OFET)
  • Pentacene

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Organic devices based on pentacene and perylene by the neutral cluster beam deposition method. / Oh, Jeong Do; Shin, Eun Sol; Kim, Dae Kyu; Choi, Jong-Ho.

In: Synthetic Metals, Vol. 220, 01.10.2016, p. 421-427.

Research output: Contribution to journalArticle

Oh, Jeong Do ; Shin, Eun Sol ; Kim, Dae Kyu ; Choi, Jong-Ho. / Organic devices based on pentacene and perylene by the neutral cluster beam deposition method. In: Synthetic Metals. 2016 ; Vol. 220. pp. 421-427.
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