Abstract
In this study, on the basis of p-type pentacene and n-type N,N′-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide (PTCDI-C8) organic field-effect transistors (OFETs) and two-input complementary NAND logic gates in the top-contact device configuration were produced and characterized. The organic active layers were deposited on hydroxyl-free polymethylmethacrylate (PMMA)-modified indium tin oxide (ITO) glass gate substrates by the neutral cluster beam deposition (NCBD) method. The morphological and structural properties of the organic semiconducting active layers on the PMMA substrates were examined using atomic force microscopy, X-ray diffraction and contact-angle goniometry. Based on the growth of high-quality, well-packed crystalline films on the PMMA dielectric-modified ITO gate substrates, the p- and n-type transistors exhibited hole and electron mobilities of 0.247 and 7.23 × 10−2 cm2/Vs, respectively, in the air without encapsulation. The trap density and activation energy were also derived from the transport characteristics for the temperature dependence of the mobilities in the temperature range 20 − 300 K for the first time. Because of the well balanced p- and n-type OFETs in the devices, the complementary metal-oxide semiconductor (CMOS) NAND logic circuits exhibited a high voltage gain and a large noise margin with slight hysteresis.
| Original language | English |
|---|---|
| Pages (from-to) | 421-427 |
| Number of pages | 7 |
| Journal | Synthetic Metals |
| Volume | 220 |
| DOIs | |
| Publication status | Published - 2016 Oct 1 |
Fingerprint
Keywords
- CMOS NAND logic gate
- Neutral cluster beam deposition (NCBD) method
- Organic field-effect transistor (OFET)
- Pentacene
ASJC Scopus subject areas
- Mechanical Engineering
- Mechanics of Materials
- Materials Chemistry
- Metals and Alloys
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Organic devices based on pentacene and perylene by the neutral cluster beam deposition method. / Oh, Jeong Do; Shin, Eun Sol; Kim, Dae Kyu; Choi, Jong-Ho.
In: Synthetic Metals, Vol. 220, 01.10.2016, p. 421-427.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Organic devices based on pentacene and perylene by the neutral cluster beam deposition method
AU - Oh, Jeong Do
AU - Shin, Eun Sol
AU - Kim, Dae Kyu
AU - Choi, Jong-Ho
PY - 2016/10/1
Y1 - 2016/10/1
N2 - In this study, on the basis of p-type pentacene and n-type N,N′-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide (PTCDI-C8) organic field-effect transistors (OFETs) and two-input complementary NAND logic gates in the top-contact device configuration were produced and characterized. The organic active layers were deposited on hydroxyl-free polymethylmethacrylate (PMMA)-modified indium tin oxide (ITO) glass gate substrates by the neutral cluster beam deposition (NCBD) method. The morphological and structural properties of the organic semiconducting active layers on the PMMA substrates were examined using atomic force microscopy, X-ray diffraction and contact-angle goniometry. Based on the growth of high-quality, well-packed crystalline films on the PMMA dielectric-modified ITO gate substrates, the p- and n-type transistors exhibited hole and electron mobilities of 0.247 and 7.23 × 10−2 cm2/Vs, respectively, in the air without encapsulation. The trap density and activation energy were also derived from the transport characteristics for the temperature dependence of the mobilities in the temperature range 20 − 300 K for the first time. Because of the well balanced p- and n-type OFETs in the devices, the complementary metal-oxide semiconductor (CMOS) NAND logic circuits exhibited a high voltage gain and a large noise margin with slight hysteresis.
AB - In this study, on the basis of p-type pentacene and n-type N,N′-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide (PTCDI-C8) organic field-effect transistors (OFETs) and two-input complementary NAND logic gates in the top-contact device configuration were produced and characterized. The organic active layers were deposited on hydroxyl-free polymethylmethacrylate (PMMA)-modified indium tin oxide (ITO) glass gate substrates by the neutral cluster beam deposition (NCBD) method. The morphological and structural properties of the organic semiconducting active layers on the PMMA substrates were examined using atomic force microscopy, X-ray diffraction and contact-angle goniometry. Based on the growth of high-quality, well-packed crystalline films on the PMMA dielectric-modified ITO gate substrates, the p- and n-type transistors exhibited hole and electron mobilities of 0.247 and 7.23 × 10−2 cm2/Vs, respectively, in the air without encapsulation. The trap density and activation energy were also derived from the transport characteristics for the temperature dependence of the mobilities in the temperature range 20 − 300 K for the first time. Because of the well balanced p- and n-type OFETs in the devices, the complementary metal-oxide semiconductor (CMOS) NAND logic circuits exhibited a high voltage gain and a large noise margin with slight hysteresis.
KW - CMOS NAND logic gate
KW - Neutral cluster beam deposition (NCBD) method
KW - Organic field-effect transistor (OFET)
KW - Pentacene
UR - http://www.scopus.com/inward/record.url?scp=84978704817&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84978704817&partnerID=8YFLogxK
U2 - 10.1016/j.synthmet.2016.07.021
DO - 10.1016/j.synthmet.2016.07.021
M3 - Article
AN - SCOPUS:84978704817
VL - 220
SP - 421
EP - 427
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
ER -