TY - JOUR
T1 - Organic devices based on pentacene and perylene by the neutral cluster beam deposition method
AU - Oh, Jeong Do
AU - Shin, Eun Sol
AU - Kim, Dae Kyu
AU - Choi, Jong Ho
N1 - Funding Information:
This study was supported by the grant from the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT and Future Planning (NRF2014R1A2A2A01005719), and the Basic Science Research Program through the NRF funded by the Ministry of Education (NRF20100020209).
Publisher Copyright:
© 2016
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/10/1
Y1 - 2016/10/1
N2 - In this study, on the basis of p-type pentacene and n-type N,N′-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide (PTCDI-C8) organic field-effect transistors (OFETs) and two-input complementary NAND logic gates in the top-contact device configuration were produced and characterized. The organic active layers were deposited on hydroxyl-free polymethylmethacrylate (PMMA)-modified indium tin oxide (ITO) glass gate substrates by the neutral cluster beam deposition (NCBD) method. The morphological and structural properties of the organic semiconducting active layers on the PMMA substrates were examined using atomic force microscopy, X-ray diffraction and contact-angle goniometry. Based on the growth of high-quality, well-packed crystalline films on the PMMA dielectric-modified ITO gate substrates, the p- and n-type transistors exhibited hole and electron mobilities of 0.247 and 7.23 × 10−2 cm2/Vs, respectively, in the air without encapsulation. The trap density and activation energy were also derived from the transport characteristics for the temperature dependence of the mobilities in the temperature range 20 − 300 K for the first time. Because of the well balanced p- and n-type OFETs in the devices, the complementary metal-oxide semiconductor (CMOS) NAND logic circuits exhibited a high voltage gain and a large noise margin with slight hysteresis.
AB - In this study, on the basis of p-type pentacene and n-type N,N′-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide (PTCDI-C8) organic field-effect transistors (OFETs) and two-input complementary NAND logic gates in the top-contact device configuration were produced and characterized. The organic active layers were deposited on hydroxyl-free polymethylmethacrylate (PMMA)-modified indium tin oxide (ITO) glass gate substrates by the neutral cluster beam deposition (NCBD) method. The morphological and structural properties of the organic semiconducting active layers on the PMMA substrates were examined using atomic force microscopy, X-ray diffraction and contact-angle goniometry. Based on the growth of high-quality, well-packed crystalline films on the PMMA dielectric-modified ITO gate substrates, the p- and n-type transistors exhibited hole and electron mobilities of 0.247 and 7.23 × 10−2 cm2/Vs, respectively, in the air without encapsulation. The trap density and activation energy were also derived from the transport characteristics for the temperature dependence of the mobilities in the temperature range 20 − 300 K for the first time. Because of the well balanced p- and n-type OFETs in the devices, the complementary metal-oxide semiconductor (CMOS) NAND logic circuits exhibited a high voltage gain and a large noise margin with slight hysteresis.
KW - CMOS NAND logic gate
KW - Neutral cluster beam deposition (NCBD) method
KW - Organic field-effect transistor (OFET)
KW - Pentacene
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U2 - 10.1016/j.synthmet.2016.07.021
DO - 10.1016/j.synthmet.2016.07.021
M3 - Article
AN - SCOPUS:84978704817
VL - 220
SP - 421
EP - 427
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
ER -