Organic thin film transistors with soluble processing hybrid dielectrics

S. I. Shin, J. H. Kwon, J. H. Seo, Byeong Kwon Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, organic thin-film transistors (OTFTs) using pentacene as an organic semiconductor have been made by hybrid dielectrics of crossed linked poly-4-vinylphenol (PVP) / methyl siloxane-based spin-on-glass (SOG) into gate dielectrics by a spin coating method. Atomic force microscope (AFM) has been used to characterize the surface morphology of spin-coated dielectric films, because a very smooth surface (Root Mean Square, Roughness = 0.44 nm) of hybrid film effectively affects the growth of organic pentacene molecules. To calibrate the surface of dielectric film, we measured contact angles using deionized water and ethylene glycol so that the surface energies of the dielectric films were calculated. We obtained devices with electrical characteristics, including field-effect mobility as large as 1.50 cm 2/Vs at the maximum saturation current of -99.07 × 10 -6 A, threshold voltage as low as -2V.

Original languageEnglish
Title of host publicationIDW '07 - Proceedings of the 14th International Display Workshops
Pages1809-1812
Number of pages4
Volume3
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/507/12/5

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

Cite this

Shin, S. I., Kwon, J. H., Seo, J. H., & Ju, B. K. (2007). Organic thin film transistors with soluble processing hybrid dielectrics. In IDW '07 - Proceedings of the 14th International Display Workshops (Vol. 3, pp. 1809-1812)