Organic vapour sensing by current response of porous silicon layer

Seong Jeen Kim, Sang Hoon Lee, Cheol Jin Lee

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

In this paper, a porous silicon (PS) layer is investigated as a sensing material to detect organic vapours with low concentration. To do this, PS sensors with membrane structure were designed and fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon and PS formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured for ethanol (called alcohol), methanol and acetone gases evaporated from 0.1-0.5% solution concentrations at 36°C. As a result, all curves showed rectifying behaviour due to a diode structure between Si and the PS layer. The conductance of our sensors mostly increased along with the organic solution concentration at a high voltage of 5 V, but the built-in potential on the measured I-V curve was lowered with it by the adsorption effect of the organic vapours with high dipole moment.

Original languageEnglish
Pages (from-to)3505-3509
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume34
Issue number24
DOIs
Publication statusPublished - 2001 Dec 21
Externally publishedYes

Fingerprint

Porous silicon
porous silicon
Vapors
vapors
sensors
Sensors
curves
Silicon sensors
Anisotropic etching
membrane structures
Membrane structures
Dipole moment
Electric potential
Silicon
Acetone
acetone
Methanol
low concentrations
high voltages
Diodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Organic vapour sensing by current response of porous silicon layer. / Kim, Seong Jeen; Lee, Sang Hoon; Lee, Cheol Jin.

In: Journal of Physics D: Applied Physics, Vol. 34, No. 24, 21.12.2001, p. 3505-3509.

Research output: Contribution to journalArticle

Kim, Seong Jeen ; Lee, Sang Hoon ; Lee, Cheol Jin. / Organic vapour sensing by current response of porous silicon layer. In: Journal of Physics D: Applied Physics. 2001 ; Vol. 34, No. 24. pp. 3505-3509.
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